Multilayers of Ge nanocrystals embedded in Al2O3 matrix: Structural and electrical studies

Ge/Al2O3 multilayer systems were grown by pulsed laser ablation. The grown samples were annealed at 900 C to promote the formation of Ge nanocrystals. Rutherford backscattering spectroscopy and TEM confirmed the presence of a multilayer system. Grazing incidence small angle X-ray scattering showed the formation of Ge nanoclusters formed between alumina layers. Room temperature I-V measurements showed weak carrier trapping in the system, explained by the leakage caused by Ge diffusion through the multilayer.