Composition and properties of TiN(x) thin films prepared by DC magnetron sputtering

TiN(x) thin films were deposited on p-Si(111) substrate by DC magnetron reactive sputtering method. The composition, structure and photoelectric properties of the films were studied by using energy dispersive x-ray spectroscopy (EDX), x-ray diffraction (XRD), UV-visible spectrophotometer, and four-probe resistivity meter. The results show that the atomic ratio N/Ti of the prepared TiN(x) thin films is close to 1. The preferred orientation of TiN(x) thin films is obviously influenced by the substrate temperature and there is a transition of the preferred orientation from (111) to (200) when the substrate temperature is about 240 degree C. The average reflectivity of the films in the near infrared band first increases and then decreases with the increase of the substrate temperature, while the resistivity of TiN(x) thin films decreases rapidly.