Investigation into SiGe HBT class E/F PA efficiency at 2 GHz for VDD from 1 to 1.8 V

This letter presents a 2-GHz SiGe heterojunction bipolar transistor fully integrated class E/F power amplifier (PA) design operating at low supply voltage. A maximum measured power added efficiency (PAE) of 39% is achieved for a supply voltage of 1.8V. At 1V, a maximum PAE of 36% is measured. The PA...

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Veröffentlicht in:	IEEE microwave and wireless components letters 2006-04, Vol.16 (4), p.170-172
Hauptverfasser:	O'Sullivan, J.A., McCarthy, K.G., Murphy, A.C., Murphy, P.J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplifiers Applied sciences BiCMOS integrated circuits Circuit properties Class E/F Design. Technologies. Operation analysis. Testing Electric potential Electric, optical and optoelectronic circuits Electronic circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Germanium silicon alloys heterojunction bipolar transistor (HBT) Heterojunction bipolar transistors Integrated circuits Low voltage Microwaves Power amplifiers Power measurement RFIC power amplifier (PA) Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon germanides Silicon germanium Switches Thermal conductivity Transceivers Voltage
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Zusammenfassung:	This letter presents a 2-GHz SiGe heterojunction bipolar transistor fully integrated class E/F power amplifier (PA) design operating at low supply voltage. A maximum measured power added efficiency (PAE) of 39% is achieved for a supply voltage of 1.8V. At 1V, a maximum PAE of 36% is measured. The PA was fabricated using an advanced 0.18-μm BiCMOS process.
ISSN:	1531-1309 2771-957X 1558-1764 2771-9588
DOI:	10.1109/LMWC.2006.872144