Physical modeling of spiral inductors on silicon

Physical modeling of spiral inductors on silicon

This paper presents a physical model for planar spiral inductors on silicon, which accounts for eddy current effect in the conductor, crossover capacitance between the spiral and center-tap, capacitance between the spiral and substrate, substrate ohmic loss, and substrate capacitance. The model has...

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Veröffentlicht in:IEEE transactions on electron devices 2000-03, Vol.47 (3), p.560-568
Hauptverfasser: Yue, C.P., Wong, S.S.
Format: Artikel
Sprache:eng
Schlagworte:
Capacitance
Eddy currents
Inductors
Mathematical models
Optimization
Silicon
Silicon substrates
Spirals
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Zusammenfassung:This paper presents a physical model for planar spiral inductors on silicon, which accounts for eddy current effect in the conductor, crossover capacitance between the spiral and center-tap, capacitance between the spiral and substrate, substrate ohmic loss, and substrate capacitance. The model has been confirmed with measured results of inductors having a wide range of layout and process parameters. This scalable inductor model enables the prediction and optimization of inductor performance.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.824729