Solution processed high performance pentacene thin-film transistors

Solution processed high performance pentacene thin-film transistors

High performance thin-film transistors were fabricated using a new precursor of pentacene through a multiple spin-heat procedure. High quality pentacene thin films can be prepared by this method and hence a FET device can be made in a top-contact configuration. The device exhibited a remarkable fiel...

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Veröffentlicht in:Chemical communications (Cambridge, England) England), 2012-01, Vol.48 (49), p.6148-6150
Hauptverfasser: Chao, Ting-Han, Chang, Ming-Jen, Watanabe, Motonori, Luo, Ming-Hui, Chang, Yuan Jay, Fang, Tzu-Chien, Chen, Kew-Yu, Chow, Tahsin J
Format: Artikel
Sprache:eng
Schlagworte:
Devices
Pentacene
Precursors
Semiconductor devices
Thin films
Transistors
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Beschreibung
Zusammenfassung:High performance thin-film transistors were fabricated using a new precursor of pentacene through a multiple spin-heat procedure. High quality pentacene thin films can be prepared by this method and hence a FET device can be made in a top-contact configuration. The device exhibited a remarkable field-effect mobility of 0.38 cm(2) V(-1) s(-1) with an on/off ratio of 10(6).
ISSN:1359-7345
1364-548X
DOI:10.1039/c2cc31754k