Simulation of TaN sub(x)deposition by Reactive PVD

Simulation of TaN sub(x)deposition by Reactive PVD

The subject of this paper is the extension of the simulation tool T2 for the application to Reactive Physical Vapor Deposition. The implemented models are briefly described and applied to the deposition of TaN sub(x)barriers. The influence of the nitrogen flow and the substrate bias on the depositio...

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Veröffentlicht in:Microelectronic engineering 2010-10, Vol.87 (10), p.1907-1913
Hauptverfasser: Wolf, H, Streiter, R, Friedemann, M, Belsky, P, Bakaeva, O, Letz, T, Gessner, T
Format: Artikel
Sprache:eng
Schlagworte:
Barriers
Computer simulation
Deposition
Mathematical models
Microelectronics
Physical vapor deposition
Variability
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Beschreibung
Zusammenfassung:The subject of this paper is the extension of the simulation tool T2 for the application to Reactive Physical Vapor Deposition. The implemented models are briefly described and applied to the deposition of TaN sub(x)barriers. The influence of the nitrogen flow and the substrate bias on the deposition rate, the thickness uniformity, and the film composition is discussed.
ISSN:0167-9317
DOI:10.1016/j.mee.2009.11.044