Highly Reliable High-Speed 1.1-$\mu$m-Range VCSELs With InGaAs/GaAsP-MQWs

In this paper, we describe high-speed 1.1- mu hbox m -range oxide-confined vertical-cavity surface-emitting lasers (VCSELs) for large-scale optical interconnection applications. For achieving high data rates up to 25 Gbit/s under high temperature, we applied InGaAs/GaAsP strain-compensated multiple quantum wells (SC-MQWs) as the active layer. The developed device showed 25 ~ Gbit/s error-free operation at 100 [compfn] hbox C . We also examined reliability of the VCSELs through accelerated life tests. The result showed an extremely long lifetime of about 10 thousand hours in MTTF under an ambient temperature of 150 [compfn] hbox C and a current density of about 19 hbox kA / cm 2 . The level of reliability either equaled or surpassed that of conventional 0.85- mu hbox m VCSELs. Moreover, we revealed a typical failure mode of the device, which was caused by dark line defects (DLDs) generated in the n-DBR layers under the current aperture area.