Microstructure of epitaxial GaN films grown on chemomechanically polished GaN(0001) substrates

An organometallic vapor phase epitaxy-based process route has been developed to achieve homoepitaxial deposition of GaN(0001) films via step-flow growth on substrates having

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Bibliographische Detailangaben
Veröffentlicht in:	Journal of crystal growth 2012-05, Vol.347 (1), p.88-94
Hauptverfasser:	Huang, Li, Liu, Fang, Zhu, Jingxi, Kamaladasa, Ranga, Preble, Edward A., Paskova, Tanya, Evans, Keith, Porter, Lisa, Picard, Yoosuf N., Davis, Robert F.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Grain boundary A1. Substrate A1. Terrace/step A1. Threading dislocations A3. Homoepitaxy B1. GaN Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Density Dislocations Epitaxial growth Exact sciences and technology Gallium nitrides Grains Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Terraces Thick films Thin film structure and morphology Three dimensional Vapor phase epitaxy growth from vapor phase
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Beschreibung
Zusammenfassung:	An organometallic vapor phase epitaxy-based process route has been developed to achieve homoepitaxial deposition of GaN(0001) films via step-flow growth on substrates having
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2012.03.002