High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With hboxAl 2hboxO 3 Gate Insulator Grown by ALD

High microwave-noise performance is realized in AlGaN/GaN metal-insulator semiconductor high-electron mobility transistors (MISHEMTs) on high-resistivity silicon substrate using atomic-layer-deposited (ALD) hboxAl 2hboxO 3 as gate insulator. The ALD hboxAl 2hboxO 3/hboxAlGaN/GaN MISHEMT with a 0.25- mu hboxm gate length shows excellent microwave small signal and noise performance. A high current-gain cutoff frequency f T of 40 GHz and maximum oscillation frequency f max of 76 GHz were achieved. At 10 GHz, the device exhibits low minimum-noise figure (hboxNF min) of 1.0 dB together with high associate gain (G a) of 10.5 dB and low equivalent noise resistance (R n) of 29.2 Omega .This is believed to be the first report of a 0.25- mu hboxm gate-length GaN MISHEMT on silicon with such microwave-noise performance. These results indicate that the AlGaN/GaN MISHEMT with ALD hboxAl 2hboxO 3 gate insulator on high-resistivity Si substrate is suitable for microwave low-noise applications.