Computer modeling of bistability effect in p-i-n diode limiter characteristic

The bistability effect noted in p-i-n diode limiters has been studied using a computer simulation based on the one-dimensional drift-diffusion model (DDM). Computed results for silicon p-i-n diodes with different base width are shown. Frequency properties of the bistability effect were studied. Also...

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Veröffentlicht in:	IEEE microwave and guided wave letters 2000-04, Vol.10 (4), p.148-150
Hauptverfasser:	Drizdovski, N., Takano, T.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Bistability Circuit properties Circuits Computation Computational modeling Computer simulation Diodes Distributed decision making Drift Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Impedance Mathematical models Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwaves P-i-n diodes Poisson equations Power generation Radio frequency Semiconductor diodes Silicon
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Beschreibung
Zusammenfassung:	The bistability effect noted in p-i-n diode limiters has been studied using a computer simulation based on the one-dimensional drift-diffusion model (DDM). Computed results for silicon p-i-n diodes with different base width are shown. Frequency properties of the bistability effect were studied. Also the comparison between theoretical and experimental results is shown.
ISSN:	1051-8207 2771-957X 1558-2329 2771-9588
DOI:	10.1109/75.846928