IR spectroscopic study of hydrogenated silicon layers

Proton-implanted (100) KEF-4.5 (phosphorus-doped) silicon wafers 460 μm in thickness have been studied by IR spectroscopy in an on-axis geometry. The implantation process has been run at increased proton energies and current densities to rather high implant doses, up to 7.1 × 10 17 H + /cm 2 . The results are used to identify the structure of chemical bonds in the hydrogen centers produced by the implantation and subsequent annealing at 550°C. We show that the assignment of absorption bands to particular Si-H x ( x = 1–3) bonds must take into account the substrate temperature during the implantation process and the annealing temperature.