Understanding growth of carbon nanowalls at atmospheric pressure using normal glow discharge plasma-enhanced chemical vapor deposition

Synthesis of carbon nanowalls (CNWs) at atmospheric pressure is realized by using a negative normal glow discharge, which differs from prior low-pressure plasma-enhanced chemical vapor deposition methods for CNW growth and holds great potential for mass-production of CNWs. The glow discharge is characterized for electrical and optical properties. The resulting CNW structures are analyzed using transmission electron microscopy, scanning electron microscopy, and Raman spectroscopy. The CNW growth process is examined for effects of discharge regime, discharge duration (growth time), hydroxyl radicals (water vapor), and local current density. Possible CNW growth mechanism and critical process parameters to the CNW growth and evolution are identified. OH radicals play an essential role in the initial nucleation process, but excess OH radicals accelerate the oxidation of CNWs. For a fixed growth time, there exists an optimum feed gas relative humidity and an optimum current density (∼40% and ∼9.17 A/m 2, respectively, in the current work) for the growth of large and less defective CNWs with a high degree of crystallinity. Results obtained in this study can be used to tailor final properties of the as-grown CNWs for various applications.