A New Isolation Technology for Automotive Power-Integrated-Circuit Applications
In this paper, a new bulk silicon isolation structure with wafer-thick trenches is proposed for automotive (42 V) power-integrated-circuit applications. This technology provides the advantages of complete isolation with lower wafer cost and higher thermal-dissipation capability as compared with the...
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| Veröffentlicht in: | IEEE transactions on electron devices 2009-09, Vol.56 (9), p.2144-2149 |
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| container_end_page | 2149 |
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| container_issue | 9 |
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| container_title | IEEE transactions on electron devices |
| container_volume | 56 |
| creator | Jingmeng Sun Jiang, F.X.C. Lingpeng Guan Zhibin Xiong Guizhen Yan Sin, J.K.O. |
| description | In this paper, a new bulk silicon isolation structure with wafer-thick trenches is proposed for automotive (42 V) power-integrated-circuit applications. This technology provides the advantages of complete isolation with lower wafer cost and higher thermal-dissipation capability as compared with the silicon-on-insulator technology. Experimental results show that the new isolation structure can provide complete electrical isolation and with a 13% reduction in thermal resistance. |
| doi_str_mv | 10.1109/TED.2009.2026089 |
| format | Article |
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This technology provides the advantages of complete isolation with lower wafer cost and higher thermal-dissipation capability as compared with the silicon-on-insulator technology. Experimental results show that the new isolation structure can provide complete electrical isolation and with a 13% reduction in thermal resistance.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2009.2026089</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Automotive ; Automotive components ; Automotive engineering ; CMOS integrated circuits ; Design. Technologies. Operation analysis. Testing ; Devices ; Electrical engineering. Electrical power engineering ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; Electronics ; Exact sciences and technology ; Heat transfer ; heat-dissipation capability ; Integrated circuits ; Other multijunction devices. Power transistors. Thyristors ; Power electronics, power supplies ; power integrated circuit (PIC) ; power transistors ; Reduction ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Silicon ; Substrates ; Temperature measurement ; Thermal resistance ; Transistors ; trench isolation ; Trenches ; VDMOS ; Wafers</subject><ispartof>IEEE transactions on electron devices, 2009-09, Vol.56 (9), p.2144-2149</ispartof><rights>2009 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2009</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c384t-4d686628808e96c701826357a17729ecaea250fe65b0f46d47ba2444bf8f56983</citedby><cites>FETCH-LOGICAL-c384t-4d686628808e96c701826357a17729ecaea250fe65b0f46d47ba2444bf8f56983</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5170030$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5170030$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21969393$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Jingmeng Sun</creatorcontrib><creatorcontrib>Jiang, F.X.C.</creatorcontrib><creatorcontrib>Lingpeng Guan</creatorcontrib><creatorcontrib>Zhibin Xiong</creatorcontrib><creatorcontrib>Guizhen Yan</creatorcontrib><creatorcontrib>Sin, J.K.O.</creatorcontrib><title>A New Isolation Technology for Automotive Power-Integrated-Circuit Applications</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>In this paper, a new bulk silicon isolation structure with wafer-thick trenches is proposed for automotive (42 V) power-integrated-circuit applications. This technology provides the advantages of complete isolation with lower wafer cost and higher thermal-dissipation capability as compared with the silicon-on-insulator technology. Experimental results show that the new isolation structure can provide complete electrical isolation and with a 13% reduction in thermal resistance.</description><subject>Applied sciences</subject><subject>Automotive</subject><subject>Automotive components</subject><subject>Automotive engineering</subject><subject>CMOS integrated circuits</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Devices</subject><subject>Electrical engineering. Electrical power engineering</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Heat transfer</subject><subject>heat-dissipation capability</subject><subject>Integrated circuits</subject><subject>Other multijunction devices. Power transistors. Thyristors</subject><subject>Power electronics, power supplies</subject><subject>power integrated circuit (PIC)</subject><subject>power transistors</subject><subject>Reduction</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon</subject><subject>Substrates</subject><subject>Temperature measurement</subject><subject>Thermal resistance</subject><subject>Transistors</subject><subject>trench isolation</subject><subject>Trenches</subject><subject>VDMOS</subject><subject>Wafers</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kctLAzEQxoMoWKt3wcsiKF5W89o8jqW-CkU91HNI01mNbDc12VX874229ODBywzD_L558CF0TPAlIVhfzW6uLynGOgcqsNI7aECqSpZacLGLBhgTVWqm2D46SOktl4JzOkCPo-IBPotJCo3tfGiLGbjXNjTh5auoQyxGfReWofMfUDyFT4jlpO3gJdoOFuXYR9f7rhitVo13v_J0iPZq2yQ42uQher69mY3vy-nj3WQ8mpaOKd6VfCGUEFQprEALJ_N1VLBKWiIl1eAsWFrhGkQ1xzUXCy7nlnLO57WqK6EVG6Lz9dxVDO89pM4sfXLQNLaF0CfDBOMVUSSDF_-CREjCGOVMZ_T0D_oW-tjmN4zKS6mShGcIryEXQ0oRarOKfmnjlyHY_DhhshPmxwmzcSJLzjZzbXK2qaNtnU9bHSVa6Lw-cydrzgPAtl0RiTHD7BsJK49k</recordid><startdate>20090901</startdate><enddate>20090901</enddate><creator>Jingmeng Sun</creator><creator>Jiang, F.X.C.</creator><creator>Lingpeng Guan</creator><creator>Zhibin Xiong</creator><creator>Guizhen Yan</creator><creator>Sin, J.K.O.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 2009-09, Vol.56 (9), p.2144-2149 |
| issn | 0018-9383 1557-9646 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Automotive Automotive components Automotive engineering CMOS integrated circuits Design. Technologies. Operation analysis. Testing Devices Electrical engineering. Electrical power engineering Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Heat transfer heat-dissipation capability Integrated circuits Other multijunction devices. Power transistors. Thyristors Power electronics, power supplies power integrated circuit (PIC) power transistors Reduction Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Substrates Temperature measurement Thermal resistance Transistors trench isolation Trenches VDMOS Wafers |
| title | A New Isolation Technology for Automotive Power-Integrated-Circuit Applications |
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