A New Isolation Technology for Automotive Power-Integrated-Circuit Applications

A New Isolation Technology for Automotive Power-Integrated-Circuit Applications

In this paper, a new bulk silicon isolation structure with wafer-thick trenches is proposed for automotive (42 V) power-integrated-circuit applications. This technology provides the advantages of complete isolation with lower wafer cost and higher thermal-dissipation capability as compared with the...

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Veröffentlicht in:IEEE transactions on electron devices 2009-09, Vol.56 (9), p.2144-2149
Hauptverfasser: Jingmeng Sun, Jiang, F.X.C., Lingpeng Guan, Zhibin Xiong, Guizhen Yan, Sin, J.K.O.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Automotive
Automotive components
Automotive engineering
CMOS integrated circuits
Design. Technologies. Operation analysis. Testing
Devices
Electrical engineering. Electrical power engineering
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Heat transfer
heat-dissipation capability
Integrated circuits
Other multijunction devices. Power transistors. Thyristors
Power electronics, power supplies
power integrated circuit (PIC)
power transistors
Reduction
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Substrates
Temperature measurement
Thermal resistance
Transistors
trench isolation
Trenches
VDMOS
Wafers
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Beschreibung
Zusammenfassung:In this paper, a new bulk silicon isolation structure with wafer-thick trenches is proposed for automotive (42 V) power-integrated-circuit applications. This technology provides the advantages of complete isolation with lower wafer cost and higher thermal-dissipation capability as compared with the silicon-on-insulator technology. Experimental results show that the new isolation structure can provide complete electrical isolation and with a 13% reduction in thermal resistance.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2009.2026089