A 440-ps 64-bit adder in 1.5-V/0.18-μm partially depleted SOI technology
A 64-bit adder in 1.5-V/0.18- mu m partially depleted SOI technology, CMOS8S, and techniques to maintain performance are described. CMOS7S SOI, a 1.8-V/0.22- mu m partially depleted SOI technology, achieves a 28% speed increase over bulk CMOS7S, and CMOS8S SOI delivers an additional 21%. In a 660-MH...
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Veröffentlicht in: | IEEE journal of solid-state circuits 2001-10, Vol.36 (10), p.1546-1552 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A 64-bit adder in 1.5-V/0.18- mu m partially depleted SOI technology, CMOS8S, and techniques to maintain performance are described. CMOS7S SOI, a 1.8-V/0.22- mu m partially depleted SOI technology, achieves a 28% speed increase over bulk CMOS7S, and CMOS8S SOI delivers an additional 21%. In a 660-MHz CMOS8S SOI processor, the adder compensates for floating body effects in SOI devices which cause history effects, bipolar currents, and lower noise margins on dynamic circuits |
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ISSN: | 0018-9200 |
DOI: | 10.1109/4.953483 |