Adsorption of water on TiN (1 0 0), (1 1 0) and (1 1 1) surfaces: A first-principles study
[Display omitted] ► We study dependence of adsorption of H 2O at TiN on its surface orientation. ► H 2O adsorbs molecularly on TiN (1 0 0) and (1 1 1) surfaces with energies −0.94 and −0.78 eV respectively. ► H 2O adsorbs dissociatively on TiN (1 1 0) surface with stronger binding (−2.44 eV). ► Gene...
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Veröffentlicht in: | Applied surface science 2011-05, Vol.257 (15), p.6462-6467 |
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Format: | Artikel |
Sprache: | eng |
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► We study dependence of adsorption of H
2O at TiN on its surface orientation. ► H
2O adsorbs molecularly on TiN (1
0
0) and (1
1
1) surfaces with energies −0.94 and −0.78
eV respectively. ► H
2O adsorbs dissociatively on TiN (1
1
0) surface with stronger binding (−2.44
eV). ► General trends seen above explain H
2O adsorption on other surfaces (e.g. ZrN/MgO).
We use first-principles density functional theory-based calculations in the analysis of the interaction of H
2O with (1
0
0), (1
1
0) and (1
1
1) surfaces of TiN, and develop understanding in terms of surface energies, polarity of the surface and chemistry of the cation, through comparison with H
2O adsorption on ZrN. While water molecule physisorbs preferentially at Ti site of (1
0
0) and (1
1
1) surfaces, it adsorbs dissociatively on (1
1
0) surface of TiN with binding stronger than almost 1.32
eV/molecule. Our analysis reveals the following general trends: (a) surfaces with higher energies typically lead to stronger adsorption, (b) dissociative adsorption of H
2O necessarily occurs on a charge neutral high energy surface and (c) lower symmetry of the (1
1
0) plane results in many configurations of comparable stability, as opposed to the higher symmetry (1
0
0) and (1
1
1) surfaces, which also consistently explain the results of H
2O adsorption on MgO available in literature. Finally, weaker adsorption of H
2O on TiN than on ZrN can be rationalized in terms of greater chemical stability of Ti arising from its ability to be in mixed valence. |
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ISSN: | 0169-4332 1873-5584 |
DOI: | 10.1016/j.apsusc.2011.02.042 |