Fullerene adsorption on semiconductor surfaces

The adsorption of C 60 and its “siblings”–including the higher fullerenes, endofullerenes, substitutionally doped species, and functionalised derivatives–on semiconductor surfaces has been studied for almost two decades. A broad range of techniques, spanning scanning probe microscopy (and the associated single molecule characterisation tools) to synchrotron-based methods such as photoemission and X-ray absorption spectroscopy, has been used to elucidate very many aspects of the chemical behaviour, electronic properties, and self-assembly of fullerenes on elemental and compound semiconductor surfaces. The fullerene-on-silicon system has also played a pivotal role in the development of room temperature molecular manipulation protocols. Here we review key advances (both experimental and theoretical) in our understanding of the fullerene-semiconductor interface over the last eighteen years. While the interaction of fullerene molecules with clean and adsorbate-covered silicon surfaces forms a key focus of the review, adsorption on germanium, III–V (GaAs, InP), and IV–VI (GeS) surfaces is also covered.