Growth of ZnGa₂O₄ nanowires on a ZnO buffer layer by carbothermal reduction of Ga₂O₃ powder

The synthesis of pure ZnGa₂O₄ nanowires (NWs) on the ZnO-coated Si substrates could be achieved by carbothermal reduction of Ga₂O₃ powder. The processing parameters such as the weight of Ga₂O₃ powder, the thickness of ZnO buffer layer, and the substrate temperature were explored. The growth of ZnGa₂O₄ NWs followed the vapor–solid process. Surplus ZnO source favored the growth of ZnGa₂O₄ NWs, while higher substrate temperature promoted the growth of Ga₂O₃ nanobelts. The results indicated a window for the growth of abundant and pure ZnGa₂O₄ NWs. The growth mechanism of ZnGa₂O₄ NWs on the ZnO buffer layer via carbothermal reduction of Ga₂O₃ powder was discussed. The ZnGa₂O₄ NWs showed a photoluminescence band centered at 466–475nm.