Characterization of diamond films deposited on Re substrate by magnetic field-assisted hot filament chemical vapor deposition

► Boron doped diamond films on rhenium substrate by hot-filament vapor chemical deposition (HFCVD) are synthesized successfully. ► The result shows that the low threshold field of the sample is 3.3V/μm. ► Also the total emission current density at 6.2V/μm increases from 6.3 to 21.5μA/cm2. ► The results infer that the electron conduction in the boron doped diamond films is improved and the electron emission is enhanced. ► The thickness of the diamond film with the period magnetic field-assisted is about 2900 nm after 4 hour deposition. ► From the observed results, it is clear that the diamond films deposited with the period magnetic field-assisted leads to improvement of its field emission characterstic. A periodically magnetic field (PMF) was used in a hot-filament chemical vapor deposited (HFCVD) for diamond growth on the rhenium substrate. The morphology, band structures and crystalline structure of the film were analyzed by the scanning electron microscopy (SEM), Raman spectroscopy and X-ray diffractometer (XRD), respectively. The results show that the thickness of the diamond film is about 2900nm by 4h deposition with magnetic field-assisted. There is no interlayer between diamond film and the rhenium substrate. The result shows that the turn on voltage of the sample is enhanced from 3.3 to 2.6V/μm with the PMF. Also the total emission current density at 6.2V/μm increased from 6.3 to 21.5μA/cm2.