Room-temperature operation of InP-based InAs quantum dot laser

Room-temperature operation of InP-based InAs quantum dot laser

A ridge waveguide quantum dot (QD) laser with a stripe width of 15 μm was fabricated by using the seven-stacked InAs QD layers based on the InAlGaAs-InAlAs material system on InP [001] substrate. Room-temperature lasing operation was observed at 1.501 μm, which is the first observation from the InAs...

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Veröffentlicht in:IEEE photonics technology letters 2004-07, Vol.16 (7), p.1607-1609
Hauptverfasser: Kim, J.S., Lee, J.H., Hong, S.U., Han, W.S., Kwack, H.-S., Lee, C.W., Oh, D.K.
Format: Artikel
Sprache:eng
Schlagworte:
Density
Gallium arsenide
Indium arsenides
Indium phosphide
Lasers
Lasing
Mathematical analysis
Optical materials
Quantum dot lasers
Quantum dots
Ridges
Substrates
Surface emitting lasers
Temperature dependence
Temperature distribution
Threshold currents
US Department of Transportation
Waveguide lasers
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Beschreibung
Zusammenfassung:A ridge waveguide quantum dot (QD) laser with a stripe width of 15 μm was fabricated by using the seven-stacked InAs QD layers based on the InAlGaAs-InAlAs material system on InP [001] substrate. Room-temperature lasing operation was observed at 1.501 μm, which is the first observation from the InAs QDs with the InAlGaAs-InAlAs structure. The characteristic temperature of the InAs QD laser calculated from the temperature dependence of threshold current density was 135 K in the temperature range from 200 K to room temperature.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2004.828494