Electrical Characterization of Advanced MIM Capacitors With rm ZrO 2 Insulator for High-Density Packaging and RF Applications

This paper deals with the electrical and wideband frequency characterizations of metal-insulator-metal (MIM) capacitors integrating the medium- Kappa material rm ZrO 2 . First, the in situ material electrical properties are characterized in a frequency range from dc up to 5 GHz by using a microstrip...

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Veröffentlicht in:IEEE transactions on components, packaging, and manufacturing technology (2011) packaging, and manufacturing technology (2011), 2012-03, Vol.2 (3), p.502-509
Hauptverfasser: Bertaud, Thomas, Bermond, Cedric, Blonkowski, Serge, Vallee, Christophe, Lacrevaz, Thierry, Farcy, Alexis, Gros-Jean, Mickael, Flechet, Bernard
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Sprache:eng
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Zusammenfassung:This paper deals with the electrical and wideband frequency characterizations of metal-insulator-metal (MIM) capacitors integrating the medium- Kappa material rm ZrO 2 . First, the in situ material electrical properties are characterized in a frequency range from dc up to 5 GHz by using a microstrip waveguide method. The loss tangent and the permittivity are extracted with frequencies up to 5 GHz. We then investigate the evolution with frequency of the electrical parameters, such as capacitance density, quality factor, temperature coefficient of capacitance, voltage coefficient of capacitance, and cut-off frequency for MIM capacitors which incorporate rm ZrO 2 dielectric layers with thickness from 10 to 45 nm.
ISSN:2156-3950
2156-3985
DOI:10.1109/TCPMT.2011.2182611