Effect of interfacial oxide on Ge MOSCAP and N-MOSFET characteristics

The effect of electrical quality of interfacial oxide on Ge MOSCAP and MOSFET characteristics is investigated. Different growth conditions are studied to optimize the interfacial layer. CV and D it measurements are done for accurate comparison of different gate dielectric stacks. Optimized ozone oxi...

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Veröffentlicht in:	Microelectronic engineering 2011-12, Vol.88 (12), p.3428-3431
Hauptverfasser:	Kuzum, Duygu, Park, Jin-Hong, Krishnamohan, Tejas, Saraswat, Krishna C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Applied sciences Corrosion Corrosion mechanisms Dielectric, amorphous and glass solid devices Dielectrics Electron mobility Electronics Exact sciences and technology Gate dielectric Gates Germanium Germanium oxides Interface passivation Metals. Metallurgy MOSCAP MOSFET Oxides Ozone oxidation Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Stacks Transistors
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