Effect of interfacial oxide on Ge MOSCAP and N-MOSFET characteristics

The effect of electrical quality of interfacial oxide on Ge MOSCAP and MOSFET characteristics is investigated. Different growth conditions are studied to optimize the interfacial layer. CV and D it measurements are done for accurate comparison of different gate dielectric stacks. Optimized ozone oxidation process is integrated with Co-induced dopant activation to fabricate Ge N-MOSFETs. Forty percent improvement in inversion electron mobility is demonstrated with optimized GeO 2 passivation. The highest electron mobility is reported in bulk Ge N-MOSFETs with GeO 2/Al 2O 3 gate dielectric stack.