A normally off GaN n-MOSFET with Schottky-barrier source and drain on a Si-auto-doped p-GaN/Si

We have fabricated an enhancement-mode n-channel Schottky-barrier-MOSFET (SB-MOSFET) for the first time on a high mobility p-type GaN film grown on silicon substrate. The metal contacts were formed by depositing Al for source/drain contact and Au for gate contact, respectively. Fabricated SB-MOSFET...

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Veröffentlicht in:	IEEE electron device letters 2006-02, Vol.27 (2), p.81-83
Hauptverfasser:	LEE, Heon-Bok, CHO, Hyun-Ick, AN, Hyun-Su, BAE, Young-Ho, LEE, Myoung-Bok, LEE, Jung-Hee, HAHM, Sung-Ho
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Antimony Applied sciences CMOS technology Deposition Dielectric substrates Drains Electron mobility Electronics Exact sciences and technology Gallium nitride Gallium nitrides GaN Leakage current MOSFET MOSFET circuits MOSFETs Schottky barrier (SB) Schottky barriers Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Silicon substrates Temperature Transconductance Transistors
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Beschreibung
Zusammenfassung:	We have fabricated an enhancement-mode n-channel Schottky-barrier-MOSFET (SB-MOSFET) for the first time on a high mobility p-type GaN film grown on silicon substrate. The metal contacts were formed by depositing Al for source/drain contact and Au for gate contact, respectively. Fabricated SB-MOSFET exhibited a threshold voltage of 1.65 V, and a maximum transconductance(g/sub m/) of 1.6 mS/mm at V/sub DS/=5V, which belongs to one of the highest value in GaN MOSFET. The maximum drain current was higher than 3 mA/mm and the off-state drain current was as low as 3 nA/mm.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2005.862675