Polarization Characteristics of Quantum-Dot Vertical-Cavity Surface-Emitting Laser With Light Injection

This investigation explores experimentally the optical characteristics of long-wavelength quantum-dot vertical-cavity surface-emitting lasers (QD VCSELs). The InAs QD VCSEL, fabricated on a GaAs substrate, is grown by molecular beam epitaxy with fully doped distributed Bragg reflectors. The optical...

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Veröffentlicht in:	IEEE photonics technology letters 2010-02, Vol.22 (3), p.179-181
Hauptverfasser:	Peng-Chun Peng, Ruei-Long Lan, Fang-Ming Wu, Lin, G., Chun-Ting Lin, Chen, J., Gong-Ru Lin, Sien Chi, Hao-Chung Kuo, Chi, J.Y.
Format:	Artikel
Sprache:	eng
Schlagworte:	Bragg reflectors Conferences Fiber optics Gallium arsenide High speed optical techniques Molecular beam epitaxial growth Molecular beam epitaxy Optical distortion Optical fibers Optical polarization Optical signal processing Photonics Quantum dots Quantum dots (QDs) Surface emitting lasers Threshold current Vertical cavity surface emission lasers Vertical cavity surface emitting lasers vertical-cavity surface-emitting lasers (VCSELs)
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Beschreibung
Zusammenfassung:	This investigation explores experimentally the optical characteristics of long-wavelength quantum-dot vertical-cavity surface-emitting lasers (QD VCSELs). The InAs QD VCSEL, fabricated on a GaAs substrate, is grown by molecular beam epitaxy with fully doped distributed Bragg reflectors. The optical characteristics of QD VCSEL without and with light injection are studied in detail. The QD VCSEL has the potential to be used in all-optical signal processing systems.
ISSN:	1041-1135 1941-0174
DOI:	10.1109/LPT.2009.2037332