Polarization-independent waveguide modulators using 1.57- mu m delta -strained InGaAs-InGaAsP quantum wells

We fabricated a multiple-quantum-well waveguide modulator incorporating two tensile S-strained layers, within a nominally lattice matched well, that act to provide bias-independent Stark shift for both the light and heavy holes. We report results for two waveguide geometries. One is a 2.3- mu m-wide...

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Veröffentlicht in:IEEE photonics technology letters 1999-05, Vol.11 (5)
Hauptverfasser: Bartolo, R E, Saini, S S, Ren, T, Zhu, Y, Dagenais, M, Shen, H, Pamulapati, J, Zhou, W, King, O, Jonson, F G
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Sprache:eng
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Zusammenfassung:We fabricated a multiple-quantum-well waveguide modulator incorporating two tensile S-strained layers, within a nominally lattice matched well, that act to provide bias-independent Stark shift for both the light and heavy holes. We report results for two waveguide geometries. One is a 2.3- mu m-wide ridge single-mode waveguide that was deep-etched 0.7 mu m below the active region to ensure that the confinement factor for both the TE and TM modes are nearly equal. The other was a broad-area (slab) multimode waveguide. For both geometries, transmission measurements indicate polarization insensitivity within 3 dB for 2.5 V of reverse bias over the 1.600-1.630- mu m wavelength range
ISSN:1041-1135
DOI:10.1109/68.759396