Alpha-particle response of an InSb radiation detector made of liquid-phase epitaxially-grown crystal
We fabricate a radiation detector using a p-type InSb crystal grown using the liquid-phase-epitaxy (LPE) method. The energy resolution for 5.5-MeV alpha particles was improved 2.4% from 2.9% through the application of bias voltage. This value represents a significant improvement over that of previou...
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Veröffentlicht in: | Radiation measurements 2011-12, Vol.46 (12), p.1654-1657 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We fabricate a radiation detector using a
p-type InSb crystal grown using the liquid-phase-epitaxy (LPE) method. The energy resolution for 5.5-MeV alpha particles was improved 2.4% from 2.9% through the application of bias voltage. This value represents a significant improvement over that of previously fabricated devices, 15–40%. |
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ISSN: | 1350-4487 1879-0925 |
DOI: | 10.1016/j.radmeas.2011.04.011 |