Mechanical properties of silicon-doped diamond-like carbon films prepared by pulse-plasma chemical vapor deposition

Silicon-doped diamond-like carbon (Si-DLC) films were prepared by dc pulse-plasma chemical vapor deposition (CVD), using a mixture of acetylene (C 2H 2) and tetramethylsilane (TMS) as the material gas. The pulse voltage was varied from − 2 to − 5 kV, and the TMS flow ratio (TMS/(C 2H 2 + TMS)) was v...

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Veröffentlicht in:Surface & coatings technology 2011-11, Vol.206 (5), p.1011-1015
Hauptverfasser: Fujimoto, Shinji, Ohtake, Naoto, Takai, Osamu
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Sprache:eng
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Zusammenfassung:Silicon-doped diamond-like carbon (Si-DLC) films were prepared by dc pulse-plasma chemical vapor deposition (CVD), using a mixture of acetylene (C 2H 2) and tetramethylsilane (TMS) as the material gas. The pulse voltage was varied from − 2 to − 5 kV, and the TMS flow ratio (TMS/(C 2H 2 + TMS)) was varied from 0 to 40%. At a pulse voltage of − 2 kV, an increase in TMS flow ratio leads to a decrease in hardness. In contrast, at a pulse voltage of − 5 kV, an increase in TMS flow ratio leads to a slight increase in hardness. The high hydrogen concentration in the films due to an increase in TMS flow ratio promotes the formation of polymeric sp 3 C―H bonds, resulting in the fabrication of soft films at a low pulse voltage of − 2 kV. However, an increase in the effect of ion peening on the growth face results in the formation of hard films at a high pulse voltage of − 5 kV. Then, at a pulse voltage of − 5 kV fabricating hard Si-DLC films, an increase in TMS flow ratio leads to an increase in the silicon content in the films, resulting in a decrease in the friction coefficient. Therefore, it is clarified that Si-DLC films fabricated by dc pulse-plasma CVD under a high pulse voltage and high TMS flow ratio exhibit high hardness and a low friction coefficient. Moreover, to investigate the friction coefficient of Si-DLC films fabricated by dc pulse-plasma CVD, films deposited by dc plasma CVD were also evaluated. To obtain the same low friction coefficient, dc pulse-plasma CVD requires less TMS than dc plasma CVD. Hence, it is also clarified that Si-DLC films can be fabricated at a low cost by dc pulse-plasma CVD. ► Silicon-doped diamond-like carbon (Si-DLC) films prepared by dc pulse-plasma chemical vapor deposition (CVD) have interesting properties. ► At a high pulse voltage, an increase in TMS flow ratio leads to a slight increase in hardness. ► At a high pulse voltage, an increase in TMS flow ratio leads to a decrease in the friction coefficient.
ISSN:0257-8972
1879-3347
DOI:10.1016/j.surfcoat.2011.03.106