A 24-GHz, +14.5-dBm fully integrated power amplifier in 0.18-μm CMOS
A 24-GHz +14.5-dBm fully integrated power amplifier with on-chip 50- Omega input and output matching is demonstrated in 0.18- mu m CMOS. The use of substrate-shielded coplanar waveguide structures for matching networks results in low passive loss and small die size. Simple circuit techniques based o...
Gespeichert in:
Veröffentlicht in: | IEEE journal of solid-state circuits 2005-09, Vol.40 (9), p.1901-1908 |
---|---|
Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | A 24-GHz +14.5-dBm fully integrated power amplifier with on-chip 50- Omega input and output matching is demonstrated in 0.18- mu m CMOS. The use of substrate-shielded coplanar waveguide structures for matching networks results in low passive loss and small die size. Simple circuit techniques based on stability criteria derived result in an unconditionally stable amplifier. The power amplifier achieves a power gain of 7 dB and a maximum single-ended output power of +14.5-dBm with a 3-dB bandwidth of 3.1 GHz, while drawing 100 mA from a 2.8-V supply. The chip area is 1.26 mm super(2). |
---|---|
ISSN: | 0018-9200 1558-173X |
DOI: | 10.1109/JSSC.2005.848143 |