Over 100 A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage

The demonstration of a normally-off n-channel AlGaN/GaN hybrid metal–oxide–semiconductor heterojunction field-effect transistor (MOS-HFET) on Si substrate for large-current operation is reported. The AlGaN/GaN hybrid MOS-HFET has the merits of both a MOS channel and an AlGaN/GaN heterostructure with...

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Veröffentlicht in:	Solid-state electronics 2010-06, Vol.54 (6), p.660-664
Hauptverfasser:	Kambayashi, Hiroshi, Satoh, Yoshihiro, Ootomo, Shinya, Kokawa, Takuya, Nomura, Takehiko, Kato, Sadahiro, Chow, Tat-sing Pawl
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitrides Applied sciences Channels Compound structure devices Electric potential Electronics Exact sciences and technology Gallium Nitride Gallium nitrides Heterojunction field-effect transistor (HFET) MOS Normally-off Over 100 A operation Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon substrates Transistors Voltage
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