Over 100 A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage

The demonstration of a normally-off n-channel AlGaN/GaN hybrid metal–oxide–semiconductor heterojunction field-effect transistor (MOS-HFET) on Si substrate for large-current operation is reported. The AlGaN/GaN hybrid MOS-HFET has the merits of both a MOS channel and an AlGaN/GaN heterostructure with high mobility two dimensional electron gases (2DEG). The maximum drain current of over 100 A with 2 μm channel length and 340 mm channel width is performed. This is the best value for a normally-off GaN-based field-effect transistor. The specific on-state resistance is 9.3 mΩ cm 2. The fabricated device also exhibits good normally-off operation with the threshold voltage of 2.7 V and the breakdown voltage of over 600 V.