A 9.1-10.7 GHz 10-W, 40-dB Gain Four-Stage PHEMT MMIC Power Amplifier

This letter presents a compact X-band high gain and high power four-stage AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) high power amplifier (PA). This amplifier is designed to fully match a 50-Omega input and output impedan...

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Bibliographische Detailangaben
Veröffentlicht in:	IEEE microwave and wireless components letters 2007-02, Vol.17 (2), p.151-153
Hauptverfasser:	CHU, Chen-Kuo, HUANG, Hou-Kuei, LIU, Hong-Zhi, LIN, Che-Hung, CHANG, Ching-Hsueh, WU, Chang-Luen, CHANG, Chian-Sern, WANG, Yeong-Her
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium arsenides Amplification Amplifiers Applied sciences Circuit properties Electric, optical and optoelectronic circuits Electron mobility Electronic circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Gain Gallium arsenide Gallium arsenides HEMTs Indium gallium arsenide Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwave integrated circuits Microwave transistors Microwaves MMICs MODFETs Monolithic microwave integrated circuit (MMIC) PHEMTs power amplifier (PA) Power amplifiers pseudomorphic high electron mobility transistors (PHEMTs) X-band
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