A 9.1-10.7 GHz 10-W, 40-dB Gain Four-Stage PHEMT MMIC Power Amplifier

This letter presents a compact X-band high gain and high power four-stage AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) high power amplifier (PA). This amplifier is designed to fully match a 50-Omega input and output impedan...

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Veröffentlicht in:IEEE microwave and wireless components letters 2007-02, Vol.17 (2), p.151-153
Hauptverfasser: CHU, Chen-Kuo, HUANG, Hou-Kuei, LIU, Hong-Zhi, LIN, Che-Hung, CHANG, Ching-Hsueh, WU, Chang-Luen, CHANG, Chian-Sern, WANG, Yeong-Her
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Sprache:eng
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Zusammenfassung:This letter presents a compact X-band high gain and high power four-stage AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) high power amplifier (PA). This amplifier is designed to fully match a 50-Omega input and output impedance. Based on 0.35-mum gate-length power PHEMT technology, this PA MMIC is fabricated on a 3-mil thick wafer. While operating under 8 V and 2700-mA dc bias condition, the characteristics of 40-dB small-signal gain, a 10-W continuous-wave saturation output power, and 33% power added efficiency at 9.7GHz can be achieved
ISSN:1531-1309
2771-957X
1558-1764
2771-9588
DOI:10.1109/LMWC.2006.890346