A 9.1-10.7 GHz 10-W, 40-dB Gain Four-Stage PHEMT MMIC Power Amplifier
This letter presents a compact X-band high gain and high power four-stage AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) high power amplifier (PA). This amplifier is designed to fully match a 50-Omega input and output impedan...
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| Veröffentlicht in: | IEEE microwave and wireless components letters 2007-02, Vol.17 (2), p.151-153 |
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| creator | CHU, Chen-Kuo HUANG, Hou-Kuei LIU, Hong-Zhi LIN, Che-Hung CHANG, Ching-Hsueh WU, Chang-Luen CHANG, Chian-Sern WANG, Yeong-Her |
| description | This letter presents a compact X-band high gain and high power four-stage AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) high power amplifier (PA). This amplifier is designed to fully match a 50-Omega input and output impedance. Based on 0.35-mum gate-length power PHEMT technology, this PA MMIC is fabricated on a 3-mil thick wafer. While operating under 8 V and 2700-mA dc bias condition, the characteristics of 40-dB small-signal gain, a 10-W continuous-wave saturation output power, and 33% power added efficiency at 9.7GHz can be achieved |
| doi_str_mv | 10.1109/LMWC.2006.890346 |
| format | Article |
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This amplifier is designed to fully match a 50-Omega input and output impedance. Based on 0.35-mum gate-length power PHEMT technology, this PA MMIC is fabricated on a 3-mil thick wafer. While operating under 8 V and 2700-mA dc bias condition, the characteristics of 40-dB small-signal gain, a 10-W continuous-wave saturation output power, and 33% power added efficiency at 9.7GHz can be achieved</description><identifier>ISSN: 1531-1309</identifier><identifier>ISSN: 2771-957X</identifier><identifier>EISSN: 1558-1764</identifier><identifier>EISSN: 2771-9588</identifier><identifier>DOI: 10.1109/LMWC.2006.890346</identifier><identifier>CODEN: IMWCBJ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Aluminum gallium arsenides ; Amplification ; Amplifiers ; Applied sciences ; Circuit properties ; Electric, optical and optoelectronic circuits ; Electron mobility ; Electronic circuits ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; Electronics ; Exact sciences and technology ; Gain ; Gallium arsenide ; Gallium arsenides ; HEMTs ; Indium gallium arsenide ; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits ; Microwave integrated circuits ; Microwave transistors ; Microwaves ; MMICs ; MODFETs ; Monolithic microwave integrated circuit (MMIC) ; PHEMTs ; power amplifier (PA) ; Power amplifiers ; pseudomorphic high electron mobility transistors (PHEMTs) ; X-band</subject><ispartof>IEEE microwave and wireless components letters, 2007-02, Vol.17 (2), p.151-153</ispartof><rights>2007 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2007</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c384t-e6ae68fb2b5e6a918b3c42a3946504332b2245f0033113ad0adf69401adfb0833</citedby><cites>FETCH-LOGICAL-c384t-e6ae68fb2b5e6a918b3c42a3946504332b2245f0033113ad0adf69401adfb0833</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4079624$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27923,27924,54757</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4079624$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18503136$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>CHU, Chen-Kuo</creatorcontrib><creatorcontrib>HUANG, Hou-Kuei</creatorcontrib><creatorcontrib>LIU, Hong-Zhi</creatorcontrib><creatorcontrib>LIN, Che-Hung</creatorcontrib><creatorcontrib>CHANG, Ching-Hsueh</creatorcontrib><creatorcontrib>WU, Chang-Luen</creatorcontrib><creatorcontrib>CHANG, Chian-Sern</creatorcontrib><creatorcontrib>WANG, Yeong-Her</creatorcontrib><title>A 9.1-10.7 GHz 10-W, 40-dB Gain Four-Stage PHEMT MMIC Power Amplifier</title><title>IEEE microwave and wireless components letters</title><addtitle>LMWC</addtitle><description>This letter presents a compact X-band high gain and high power four-stage AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) high power amplifier (PA). This amplifier is designed to fully match a 50-Omega input and output impedance. Based on 0.35-mum gate-length power PHEMT technology, this PA MMIC is fabricated on a 3-mil thick wafer. While operating under 8 V and 2700-mA dc bias condition, the characteristics of 40-dB small-signal gain, a 10-W continuous-wave saturation output power, and 33% power added efficiency at 9.7GHz can be achieved</description><subject>Aluminum gallium arsenides</subject><subject>Amplification</subject><subject>Amplifiers</subject><subject>Applied sciences</subject><subject>Circuit properties</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electron mobility</subject><subject>Electronic circuits</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gain</subject><subject>Gallium arsenide</subject><subject>Gallium arsenides</subject><subject>HEMTs</subject><subject>Indium gallium arsenide</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>Microwave integrated circuits</subject><subject>Microwave transistors</subject><subject>Microwaves</subject><subject>MMICs</subject><subject>MODFETs</subject><subject>Monolithic microwave integrated circuit (MMIC)</subject><subject>PHEMTs</subject><subject>power amplifier (PA)</subject><subject>Power amplifiers</subject><subject>pseudomorphic high electron mobility transistors (PHEMTs)</subject><subject>X-band</subject><issn>1531-1309</issn><issn>2771-957X</issn><issn>1558-1764</issn><issn>2771-9588</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kM1r20AQxZfSQFOn90IvS6Elh0qd0Yz24-gYxw7YNNCUHJeVvCoKsuXu2pTkr4-EQws99DQP3m8eM0-I9wg5Itivq_X9LC8AVG4sEKtX4hzL0mSoFb8eNWGGBPaNeJvSAwCyYTwX86m0-eBAruVi-SQRsvsvkiHbXMmFb3fyuj_G7PvB_wzydjlf38n1-mYmb_vfIcrpdt-1TRvihThrfJfCu5c5ET-u53ezZbb6triZTVdZTYYPWVA-KNNURVUO0qKpqObCk2VVAhMVVVFw2QAQIZLfgN80yjLgMCswRBPx-ZS7j_2vY0gHt21THbrO70J_TI6YtdGqHMDL_4KoNBastB4zP_6DPgwv74Y3nFGswOrhnomAE1THPqUYGreP7dbHR4fgxv7d2L8b-3en_oeVTy-5PtW-a6Lf1W36u2dKIKSR-3Di2hDCH5tBW1UwPQPGSoYa</recordid><startdate>20070201</startdate><enddate>20070201</enddate><creator>CHU, Chen-Kuo</creator><creator>HUANG, Hou-Kuei</creator><creator>LIU, Hong-Zhi</creator><creator>LIN, Che-Hung</creator><creator>CHANG, Ching-Hsueh</creator><creator>WU, Chang-Luen</creator><creator>CHANG, Chian-Sern</creator><creator>WANG, Yeong-Her</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7QF</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope></search><sort><creationdate>20070201</creationdate><title>A 9.1-10.7 GHz 10-W, 40-dB Gain Four-Stage PHEMT MMIC Power Amplifier</title><author>CHU, Chen-Kuo ; HUANG, Hou-Kuei ; LIU, Hong-Zhi ; LIN, Che-Hung ; CHANG, Ching-Hsueh ; WU, Chang-Luen ; CHANG, Chian-Sern ; WANG, Yeong-Her</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c384t-e6ae68fb2b5e6a918b3c42a3946504332b2245f0033113ad0adf69401adfb0833</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Aluminum gallium arsenides</topic><topic>Amplification</topic><topic>Amplifiers</topic><topic>Applied sciences</topic><topic>Circuit properties</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electron mobility</topic><topic>Electronic circuits</topic><topic>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gain</topic><topic>Gallium arsenide</topic><topic>Gallium arsenides</topic><topic>HEMTs</topic><topic>Indium gallium arsenide</topic><topic>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</topic><topic>Microwave integrated circuits</topic><topic>Microwave transistors</topic><topic>Microwaves</topic><topic>MMICs</topic><topic>MODFETs</topic><topic>Monolithic microwave integrated circuit (MMIC)</topic><topic>PHEMTs</topic><topic>power amplifier (PA)</topic><topic>Power amplifiers</topic><topic>pseudomorphic high electron mobility transistors (PHEMTs)</topic><topic>X-band</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>CHU, Chen-Kuo</creatorcontrib><creatorcontrib>HUANG, Hou-Kuei</creatorcontrib><creatorcontrib>LIU, Hong-Zhi</creatorcontrib><creatorcontrib>LIN, Che-Hung</creatorcontrib><creatorcontrib>CHANG, Ching-Hsueh</creatorcontrib><creatorcontrib>WU, Chang-Luen</creatorcontrib><creatorcontrib>CHANG, Chian-Sern</creatorcontrib><creatorcontrib>WANG, Yeong-Her</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aluminium Industry Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><jtitle>IEEE microwave and wireless components letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHU, Chen-Kuo</au><au>HUANG, Hou-Kuei</au><au>LIU, Hong-Zhi</au><au>LIN, Che-Hung</au><au>CHANG, Ching-Hsueh</au><au>WU, Chang-Luen</au><au>CHANG, Chian-Sern</au><au>WANG, Yeong-Her</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A 9.1-10.7 GHz 10-W, 40-dB Gain Four-Stage PHEMT MMIC Power Amplifier</atitle><jtitle>IEEE microwave and wireless components letters</jtitle><stitle>LMWC</stitle><date>2007-02-01</date><risdate>2007</risdate><volume>17</volume><issue>2</issue><spage>151</spage><epage>153</epage><pages>151-153</pages><issn>1531-1309</issn><issn>2771-957X</issn><eissn>1558-1764</eissn><eissn>2771-9588</eissn><coden>IMWCBJ</coden><abstract>This letter presents a compact X-band high gain and high power four-stage AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) high power amplifier (PA). This amplifier is designed to fully match a 50-Omega input and output impedance. Based on 0.35-mum gate-length power PHEMT technology, this PA MMIC is fabricated on a 3-mil thick wafer. While operating under 8 V and 2700-mA dc bias condition, the characteristics of 40-dB small-signal gain, a 10-W continuous-wave saturation output power, and 33% power added efficiency at 9.7GHz can be achieved</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LMWC.2006.890346</doi><tpages>3</tpages></addata></record> |
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| ispartof | IEEE microwave and wireless components letters, 2007-02, Vol.17 (2), p.151-153 |
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| subjects | Aluminum gallium arsenides Amplification Amplifiers Applied sciences Circuit properties Electric, optical and optoelectronic circuits Electron mobility Electronic circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Gain Gallium arsenide Gallium arsenides HEMTs Indium gallium arsenide Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwave integrated circuits Microwave transistors Microwaves MMICs MODFETs Monolithic microwave integrated circuit (MMIC) PHEMTs power amplifier (PA) Power amplifiers pseudomorphic high electron mobility transistors (PHEMTs) X-band |
| title | A 9.1-10.7 GHz 10-W, 40-dB Gain Four-Stage PHEMT MMIC Power Amplifier |
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