Magnetoresistance and Current-Driven Resistance Change Measurements in NiFe Film With a Nanoconstriction

A nano fabricated planar point contact (PC) in NiFe film showed a magnetoresistance (MR) ratio of about 18%, and it stabilized at about 12%; with both values being much larger than those for the anisotropic MR (AMR) ratio of the film. The measurements of current-driven resistance change in the PC we...

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Veröffentlicht in:	IEEE transactions on magnetics 2006-10, Vol.42 (10), p.2615-2617
1. Verfasser:	Ohsawa, Y.
Format:	Artikel
Sprache:	eng
Schlagworte:	Anisotropic magnetoresistance Ballistic magnetoresistance Cross-disciplinary physics: materials science rheology Current measurement Electrical resistance measurement Exact sciences and technology Ion beams Iron compounds Magnetic confinement Magnetic domain walls magnetic domains Magnetic field measurement Magnetic films Magnetism Magnetoresistance Magnetoresistivity Materials science Nanocomposites Nanomaterials Nanostructure nanotechnology Nickel base alloys Nickel compounds Other topics in materials science Performance evaluation Physics Tellurium
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Zusammenfassung:	A nano fabricated planar point contact (PC) in NiFe film showed a magnetoresistance (MR) ratio of about 18%, and it stabilized at about 12%; with both values being much larger than those for the anisotropic MR (AMR) ratio of the film. The measurements of current-driven resistance change in the PC were also performed in which about 10.5% resistance change was observed. The saturated resistances coincided with the typical values in the MR measurements (MR: 12%). These results inspired correlation between MR and domain wall
ISSN:	0018-9464 1941-0069
DOI:	10.1109/TMAG.2006.878855