Simultaneous measurement of emissivity and temperature of silicon wafers using a polarization technique

The emissivity of a silicon wafer under various conditions was theoretically and experimentally investigated. A quantitative relationship between the ratio of p-polarized to s-polarized radiances, and the polarized emissivity was obtained, irrespective of the emissivity change of silicon wafers due to oxide film thickness under wide variations of impurity concentration. We propose a new radiation thermometry method that can measure both the temperature and the spectral polarized emissivity of a silicon wafer, and we estimate the uncertainty of these measurements. Currently, the expanded uncertainty of the temperature measurement is estimated to be 3.52 K (2 k) and 3.80 (2 k) for p-polarization and s-polarization, respectively, at temperatures above 900 K.