The relation between the microstructural properties and the geometry factors for GaN nanorods formed on Si(111) substrates

An X-ray diffraction pattern (XRD) showed that GaN nanorods grown on Si(111) substrates were preferentially oriented along the [0001] direction. The transmission electron microscopy (TEM) images showed that the side facet planes of the tip region for the GaN nanorods consisted of { 1 ̄ 100 } and { 1...

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Veröffentlicht in:	Solid state communications 2010-04, Vol.150 (13), p.636-639
Hauptverfasser:	Lee, K.H., Lee, J.Y., Kwon, Y.H., Ryu, S.Y., Kang, T.W., Jung, H.Y., Park, S.H., Lee, D.U., Kim, T.W.
Format:	Artikel
Sprache:	eng
Schlagworte:	A. Disordered system A. Nanostructures A. Surface and interfaces C. Scanning and transmission electron microscopy Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Gallium nitrides Mathematical analysis Microstructure Nanorods Nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals Physics Planes Silicon substrates Structure of solids and liquids crystallography Transmission electron microscopy
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Zusammenfassung:	An X-ray diffraction pattern (XRD) showed that GaN nanorods grown on Si(111) substrates were preferentially oriented along the [0001] direction. The transmission electron microscopy (TEM) images showed that the side facet planes of the tip region for the GaN nanorods consisted of { 1 ̄ 100 } and { 1 ̄ 102 } planes. The disordered nuclei of the GaN nanorods produced a two-dimensional thin-film layer near the GaN/Si(111) interfacial region. The relation between the microstructural properties and the geometry factors of the tip region for GaN nanorods formed on Si(111) substrates is described on the basis of the XRD and TEM results.
ISSN:	0038-1098 1879-2766
DOI:	10.1016/j.ssc.2009.12.030