Growth of homogenous CuO nano-structured thin films by a simple solution method
▶ Average thicknesses of the plate-like nanostructures are 100 nm. ▶ CuO crystallized in monoclinic structure in ( 1 ¯ 1 1 ) and (1 1 1) directions. ▶ Ionization energies of the impurity levels are 0.30 eV and 0.32 eV. ▶ Band gap energies are 1.37 eV and 1.39 eV. This paper describes a simple, l...
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Veröffentlicht in: | Journal of alloys and compounds 2011-02, Vol.509 (5), p.2094-2098 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | ▶ Average thicknesses of the plate-like nanostructures are 100
nm. ▶ CuO crystallized in monoclinic structure in
(
1
¯
1
1
)
and (1
1
1) directions. ▶ Ionization energies of the impurity levels are 0.30
eV and 0.32
eV. ▶ Band gap energies are 1.37
eV and 1.39
eV.
This paper describes a simple, low temperature and cost effective solution method to synthesize homogenous cupric oxide (CuO) nano-structured thin films. By this method dense and continuous CuO films with good crystallinity can be prepared in a short time, e.g., in 15
min. The scanning electron microscopy illustrated that the synthesized CuO plate-like nanostructures have RMS thicknesses of 100
nm. The XRD measurements showed that the synthesized CuO nanostructures have a high crystallinity with monoclinic crystal structure preferentially in
(
1
¯
1
1
)
and (1
1
1) directions. From the temperature dependant dark electrical resistivity measurements the ionization energies of the impurity levels and thermal band gap energies of the films were calculated. |
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ISSN: | 0925-8388 1873-4669 |
DOI: | 10.1016/j.jallcom.2010.10.146 |