Growth of homogenous CuO nano-structured thin films by a simple solution method

▶ Average thicknesses of the plate-like nanostructures are 100 nm. ▶ CuO crystallized in monoclinic structure in ( 1 ¯   1   1 ) and (1 1 1) directions. ▶ Ionization energies of the impurity levels are 0.30 eV and 0.32 eV. ▶ Band gap energies are 1.37 eV and 1.39 eV. This paper describes a simple, l...

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Veröffentlicht in:Journal of alloys and compounds 2011-02, Vol.509 (5), p.2094-2098
Hauptverfasser: Bayansal, F., Kahraman, S., Çankaya, G., Çetinkara, H.A., Güder, H.S., Çakmak, H.M.
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Sprache:eng
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Zusammenfassung:▶ Average thicknesses of the plate-like nanostructures are 100 nm. ▶ CuO crystallized in monoclinic structure in ( 1 ¯   1   1 ) and (1 1 1) directions. ▶ Ionization energies of the impurity levels are 0.30 eV and 0.32 eV. ▶ Band gap energies are 1.37 eV and 1.39 eV. This paper describes a simple, low temperature and cost effective solution method to synthesize homogenous cupric oxide (CuO) nano-structured thin films. By this method dense and continuous CuO films with good crystallinity can be prepared in a short time, e.g., in 15 min. The scanning electron microscopy illustrated that the synthesized CuO plate-like nanostructures have RMS thicknesses of 100 nm. The XRD measurements showed that the synthesized CuO nanostructures have a high crystallinity with monoclinic crystal structure preferentially in ( 1 ¯   1   1 ) and (1 1 1) directions. From the temperature dependant dark electrical resistivity measurements the ionization energies of the impurity levels and thermal band gap energies of the films were calculated.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2010.10.146