Measure the barrier height of manganite p–n heterojunction by activation energy measurement

Measure the barrier height of manganite p–n heterojunction by activation energy measurement

The barrier height of the manganite based p–n heterojunction is identified from the activation energy. The La0.35Pr0.32Ca0.33MnO3/Nb-doped SrTiO3 p–n heterojunction is fabricated by the pulse laser deposition technology. The junction shows good rectifying behavior which can be well described by the...

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Veröffentlicht in:Materials science in semiconductor processing 2015-01, Vol.29, p.213-217
Hauptverfasser: Wang, Mei, Wang, Dengjing, Ma, Junjie, Wang, Ruwu, Li, Yunbao
Format: Artikel
Sprache:eng
Schlagworte:
Activation energy
Barriers
Bias
Extrapolation
Heterojunction
Heterojunctions
Interfacial barrier
Manganite
Manganites
Mathematical analysis
Semiconductors
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container_title Materials science in semiconductor processing
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creator Wang, Mei
Wang, Dengjing
Ma, Junjie
Wang, Ruwu
Li, Yunbao
description The barrier height of the manganite based p–n heterojunction is identified from the activation energy. The La0.35Pr0.32Ca0.33MnO3/Nb-doped SrTiO3 p–n heterojunction is fabricated by the pulse laser deposition technology. The junction shows good rectifying behavior which can be well described by the Shockley equation. A satisfactorily logarithmic linear dependence of resistance on temperature is observed, and also the relation between bias and activation energy (EA) deduced from the R−1/T curves is linear. As a result, the interfacial barrier of the heterojunction is obtained by extrapolating the Bias –EA plot to Y axis, which is 0.95eV.
doi_str_mv 10.1016/j.mssp.2014.03.014
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1669899373</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S1369800114001486</els_id><sourcerecordid>1669899373</sourcerecordid><originalsourceid>FETCH-LOGICAL-c354t-e4c4ea9c57ac2995aad7e410f131123db22f8f9e180fbe9b714446e68b50fbbb3</originalsourceid><addsrcrecordid>eNp9UMtOwzAQtBBIlMIPcPKRS4IdOw9LXFDFSyriAkdkOc6mddQ4xXYq9cY_8Id8CS7hzGlmd2dG2kHokpKUElpcd2nv_TbNCOUpYWmEIzSjVckSTip6HDkrRFIRQk_RmfcdISTPaDFD78-g_OgAhzXgWjlnwOE1mNU64KHFvbIrZU0AvP3-_LLxEsAN3Wh1MIPF9R6ryHbqdwILbrXH_ZTYgw3n6KRVGw8XfzhHb_d3r4vHZPny8LS4XSaa5TwkwDUHJXReKp0JkSvVlMApaSmjNGNNnWVt1QqgFWlrEHVJOecFFFWdx0Vdszm6mnK3bvgYwQfZG69hs1EWhtFLWhSiEoKVLEqzSard4L2DVm6d6ZXbS0rkoUvZyUOX8tClJExGiKabyQTxiV2sSHptwGpojAMdZDOY_-w_Fs2AbA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1669899373</pqid></control><display><type>article</type><title>Measure the barrier height of manganite p–n heterojunction by activation energy measurement</title><source>Access via ScienceDirect (Elsevier)</source><creator>Wang, Mei ; Wang, Dengjing ; Ma, Junjie ; Wang, Ruwu ; Li, Yunbao</creator><creatorcontrib>Wang, Mei ; Wang, Dengjing ; Ma, Junjie ; Wang, Ruwu ; Li, Yunbao</creatorcontrib><description>The barrier height of the manganite based p–n heterojunction is identified from the activation energy. The La0.35Pr0.32Ca0.33MnO3/Nb-doped SrTiO3 p–n heterojunction is fabricated by the pulse laser deposition technology. The junction shows good rectifying behavior which can be well described by the Shockley equation. A satisfactorily logarithmic linear dependence of resistance on temperature is observed, and also the relation between bias and activation energy (EA) deduced from the R−1/T curves is linear. As a result, the interfacial barrier of the heterojunction is obtained by extrapolating the Bias –EA plot to Y axis, which is 0.95eV.</description><identifier>ISSN: 1369-8001</identifier><identifier>EISSN: 1873-4081</identifier><identifier>DOI: 10.1016/j.mssp.2014.03.014</identifier><language>eng</language><publisher>Elsevier Ltd</publisher><subject>Activation energy ; Barriers ; Bias ; Extrapolation ; Heterojunction ; Heterojunctions ; Interfacial barrier ; Manganite ; Manganites ; Mathematical analysis ; Semiconductors</subject><ispartof>Materials science in semiconductor processing, 2015-01, Vol.29, p.213-217</ispartof><rights>2014</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c354t-e4c4ea9c57ac2995aad7e410f131123db22f8f9e180fbe9b714446e68b50fbbb3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.mssp.2014.03.014$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Wang, Mei</creatorcontrib><creatorcontrib>Wang, Dengjing</creatorcontrib><creatorcontrib>Ma, Junjie</creatorcontrib><creatorcontrib>Wang, Ruwu</creatorcontrib><creatorcontrib>Li, Yunbao</creatorcontrib><title>Measure the barrier height of manganite p–n heterojunction by activation energy measurement</title><title>Materials science in semiconductor processing</title><description>The barrier height of the manganite based p–n heterojunction is identified from the activation energy. The La0.35Pr0.32Ca0.33MnO3/Nb-doped SrTiO3 p–n heterojunction is fabricated by the pulse laser deposition technology. The junction shows good rectifying behavior which can be well described by the Shockley equation. A satisfactorily logarithmic linear dependence of resistance on temperature is observed, and also the relation between bias and activation energy (EA) deduced from the R−1/T curves is linear. As a result, the interfacial barrier of the heterojunction is obtained by extrapolating the Bias –EA plot to Y axis, which is 0.95eV.</description><subject>Activation energy</subject><subject>Barriers</subject><subject>Bias</subject><subject>Extrapolation</subject><subject>Heterojunction</subject><subject>Heterojunctions</subject><subject>Interfacial barrier</subject><subject>Manganite</subject><subject>Manganites</subject><subject>Mathematical analysis</subject><subject>Semiconductors</subject><issn>1369-8001</issn><issn>1873-4081</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNp9UMtOwzAQtBBIlMIPcPKRS4IdOw9LXFDFSyriAkdkOc6mddQ4xXYq9cY_8Id8CS7hzGlmd2dG2kHokpKUElpcd2nv_TbNCOUpYWmEIzSjVckSTip6HDkrRFIRQk_RmfcdISTPaDFD78-g_OgAhzXgWjlnwOE1mNU64KHFvbIrZU0AvP3-_LLxEsAN3Wh1MIPF9R6ryHbqdwILbrXH_ZTYgw3n6KRVGw8XfzhHb_d3r4vHZPny8LS4XSaa5TwkwDUHJXReKp0JkSvVlMApaSmjNGNNnWVt1QqgFWlrEHVJOecFFFWdx0Vdszm6mnK3bvgYwQfZG69hs1EWhtFLWhSiEoKVLEqzSard4L2DVm6d6ZXbS0rkoUvZyUOX8tClJExGiKabyQTxiV2sSHptwGpojAMdZDOY_-w_Fs2AbA</recordid><startdate>20150101</startdate><enddate>20150101</enddate><creator>Wang, Mei</creator><creator>Wang, Dengjing</creator><creator>Ma, Junjie</creator><creator>Wang, Ruwu</creator><creator>Li, Yunbao</creator><general>Elsevier Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20150101</creationdate><title>Measure the barrier height of manganite p–n heterojunction by activation energy measurement</title><author>Wang, Mei ; Wang, Dengjing ; Ma, Junjie ; Wang, Ruwu ; Li, Yunbao</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c354t-e4c4ea9c57ac2995aad7e410f131123db22f8f9e180fbe9b714446e68b50fbbb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Activation energy</topic><topic>Barriers</topic><topic>Bias</topic><topic>Extrapolation</topic><topic>Heterojunction</topic><topic>Heterojunctions</topic><topic>Interfacial barrier</topic><topic>Manganite</topic><topic>Manganites</topic><topic>Mathematical analysis</topic><topic>Semiconductors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, Mei</creatorcontrib><creatorcontrib>Wang, Dengjing</creatorcontrib><creatorcontrib>Ma, Junjie</creatorcontrib><creatorcontrib>Wang, Ruwu</creatorcontrib><creatorcontrib>Li, Yunbao</creatorcontrib><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Materials science in semiconductor processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wang, Mei</au><au>Wang, Dengjing</au><au>Ma, Junjie</au><au>Wang, Ruwu</au><au>Li, Yunbao</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Measure the barrier height of manganite p–n heterojunction by activation energy measurement</atitle><jtitle>Materials science in semiconductor processing</jtitle><date>2015-01-01</date><risdate>2015</risdate><volume>29</volume><spage>213</spage><epage>217</epage><pages>213-217</pages><issn>1369-8001</issn><eissn>1873-4081</eissn><abstract>The barrier height of the manganite based p–n heterojunction is identified from the activation energy. The La0.35Pr0.32Ca0.33MnO3/Nb-doped SrTiO3 p–n heterojunction is fabricated by the pulse laser deposition technology. The junction shows good rectifying behavior which can be well described by the Shockley equation. A satisfactorily logarithmic linear dependence of resistance on temperature is observed, and also the relation between bias and activation energy (EA) deduced from the R−1/T curves is linear. As a result, the interfacial barrier of the heterojunction is obtained by extrapolating the Bias –EA plot to Y axis, which is 0.95eV.</abstract><pub>Elsevier Ltd</pub><doi>10.1016/j.mssp.2014.03.014</doi><tpages>5</tpages></addata></record>
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subjects Activation energy
Barriers
Bias
Extrapolation
Heterojunction
Heterojunctions
Interfacial barrier
Manganite
Manganites
Mathematical analysis
Semiconductors
title Measure the barrier height of manganite p–n heterojunction by activation energy measurement
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-23T09%3A58%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Measure%20the%20barrier%20height%20of%20manganite%20p%E2%80%93n%20heterojunction%20by%20activation%20energy%20measurement&rft.jtitle=Materials%20science%20in%20semiconductor%20processing&rft.au=Wang,%20Mei&rft.date=2015-01-01&rft.volume=29&rft.spage=213&rft.epage=217&rft.pages=213-217&rft.issn=1369-8001&rft.eissn=1873-4081&rft_id=info:doi/10.1016/j.mssp.2014.03.014&rft_dat=%3Cproquest_cross%3E1669899373%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1669899373&rft_id=info:pmid/&rft_els_id=S1369800114001486&rfr_iscdi=true