Tunnel current and I–V characteristics of vacuum extremely-high-frequency microelectronic structures
Tunneling (cold emission) through potential barriers of a complex shape in vacuum microelectronic diode and triode structures, including those with several electrodes, is theoretically investigated and I – V characteristics of these structures are obtained.
Gespeichert in:
| Veröffentlicht in: | Journal of communications technology & electronics 2015-02, Vol.60 (2), p.193-203 |
|---|---|
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 203 |
|---|---|
| container_issue | 2 |
| container_start_page | 193 |
| container_title | Journal of communications technology & electronics |
| container_volume | 60 |
| creator | Bushuev, N. A. |
| description | Tunneling (cold emission) through potential barriers of a complex shape in vacuum microelectronic diode and triode structures, including those with several electrodes, is theoretically investigated and
I
–
V
characteristics of these structures are obtained. |
| doi_str_mv | 10.1134/S1064226915020023 |
| format | Article |
| fullrecord | <record><control><sourceid>gale_proqu</sourceid><recordid>TN_cdi_proquest_miscellaneous_1669894381</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><galeid>A408783734</galeid><sourcerecordid>A408783734</sourcerecordid><originalsourceid>FETCH-LOGICAL-c459t-e28744dfcbadc7199ab95d3591d98a695000e59da8c6fbb05f9d4d6cf1ffb2793</originalsourceid><addsrcrecordid>eNp1kt-K1TAQxosouK4-gHcFbxTsmrRJm1wui6sHFgT3z21J08k5Wdp0zSSy58538A19EmepF3sUCUzCzO8LMx9TFK85O-G8ER8uOWtFXbeaS1YzVjdPiiMupaxaKbun9KZy9VB_XrxAvGWs0S1rjgp3lUOAqbQ5RgipNGEsN79-_Lwp7c5EYxNEj8lbLBdXfjc257mE-xRhhmlf7fx2V7kI3zIEuy9nb-MCE9gUl-BtiSlmm3IEfFk8c2ZCePXnPi6uzz9enX2uLr582pydXlRWSJ0qqFUnxOjsYEbbca3NoOXYSM1HrUyrJWMMpB6Nsq0bBiadHsXYWsedG-pON8fF2_Xfu7hQU5j62aOFaTIBlow9b1uttGgUJ_TNX-jtkmOg7oiSQinOlCTqZKW2ZoLeB7ckcoXOCDTtEsB5yp8KpjrVdI0gwbsDATGJDNuajNhvLr8esu8fsUNGHwApINmacJUc4HzFyWXECK6_i342cd9z1j9sQf_PFpCmXjVIbNhCfDTlf0W_ATbrtQo</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1654881085</pqid></control><display><type>article</type><title>Tunnel current and I–V characteristics of vacuum extremely-high-frequency microelectronic structures</title><source>SpringerLink Journals - AutoHoldings</source><creator>Bushuev, N. A.</creator><creatorcontrib>Bushuev, N. A.</creatorcontrib><description>Tunneling (cold emission) through potential barriers of a complex shape in vacuum microelectronic diode and triode structures, including those with several electrodes, is theoretically investigated and
I
–
V
characteristics of these structures are obtained.</description><identifier>ISSN: 1064-2269</identifier><identifier>EISSN: 1555-6557</identifier><identifier>DOI: 10.1134/S1064226915020023</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Analysis ; Communications Engineering ; Communications technology ; Diodes ; Electrodes ; Electron and Ion Emission ; Electrons ; Emission ; Emission analysis ; Energy ; Engineering ; Microelectronics ; Networks ; Potential barriers ; Studies ; Triodes ; Tunnels (transportation) ; Vacuum technology</subject><ispartof>Journal of communications technology & electronics, 2015-02, Vol.60 (2), p.193-203</ispartof><rights>Pleiades Publishing, Inc. 2015</rights><rights>COPYRIGHT 2015 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c459t-e28744dfcbadc7199ab95d3591d98a695000e59da8c6fbb05f9d4d6cf1ffb2793</citedby><cites>FETCH-LOGICAL-c459t-e28744dfcbadc7199ab95d3591d98a695000e59da8c6fbb05f9d4d6cf1ffb2793</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1064226915020023$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1064226915020023$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Bushuev, N. A.</creatorcontrib><title>Tunnel current and I–V characteristics of vacuum extremely-high-frequency microelectronic structures</title><title>Journal of communications technology & electronics</title><addtitle>J. Commun. Technol. Electron</addtitle><description>Tunneling (cold emission) through potential barriers of a complex shape in vacuum microelectronic diode and triode structures, including those with several electrodes, is theoretically investigated and
I
–
V
characteristics of these structures are obtained.</description><subject>Analysis</subject><subject>Communications Engineering</subject><subject>Communications technology</subject><subject>Diodes</subject><subject>Electrodes</subject><subject>Electron and Ion Emission</subject><subject>Electrons</subject><subject>Emission</subject><subject>Emission analysis</subject><subject>Energy</subject><subject>Engineering</subject><subject>Microelectronics</subject><subject>Networks</subject><subject>Potential barriers</subject><subject>Studies</subject><subject>Triodes</subject><subject>Tunnels (transportation)</subject><subject>Vacuum technology</subject><issn>1064-2269</issn><issn>1555-6557</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><sourceid>N95</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><recordid>eNp1kt-K1TAQxosouK4-gHcFbxTsmrRJm1wui6sHFgT3z21J08k5Wdp0zSSy58538A19EmepF3sUCUzCzO8LMx9TFK85O-G8ER8uOWtFXbeaS1YzVjdPiiMupaxaKbun9KZy9VB_XrxAvGWs0S1rjgp3lUOAqbQ5RgipNGEsN79-_Lwp7c5EYxNEj8lbLBdXfjc257mE-xRhhmlf7fx2V7kI3zIEuy9nb-MCE9gUl-BtiSlmm3IEfFk8c2ZCePXnPi6uzz9enX2uLr582pydXlRWSJ0qqFUnxOjsYEbbca3NoOXYSM1HrUyrJWMMpB6Nsq0bBiadHsXYWsedG-pON8fF2_Xfu7hQU5j62aOFaTIBlow9b1uttGgUJ_TNX-jtkmOg7oiSQinOlCTqZKW2ZoLeB7ckcoXOCDTtEsB5yp8KpjrVdI0gwbsDATGJDNuajNhvLr8esu8fsUNGHwApINmacJUc4HzFyWXECK6_i342cd9z1j9sQf_PFpCmXjVIbNhCfDTlf0W_ATbrtQo</recordid><startdate>20150201</startdate><enddate>20150201</enddate><creator>Bushuev, N. A.</creator><general>Pleiades Publishing</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>N95</scope><scope>XI7</scope><scope>ISR</scope><scope>3V.</scope><scope>7SP</scope><scope>7WY</scope><scope>7WZ</scope><scope>7XB</scope><scope>87Z</scope><scope>88I</scope><scope>88K</scope><scope>8AO</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8FL</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BEZIV</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>FRNLG</scope><scope>F~G</scope><scope>GNUQQ</scope><scope>HCIFZ</scope><scope>K60</scope><scope>K6~</scope><scope>L.-</scope><scope>L7M</scope><scope>M0C</scope><scope>M2P</scope><scope>M2T</scope><scope>P5Z</scope><scope>P62</scope><scope>PQBIZ</scope><scope>PQBZA</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PYYUZ</scope><scope>Q9U</scope></search><sort><creationdate>20150201</creationdate><title>Tunnel current and I–V characteristics of vacuum extremely-high-frequency microelectronic structures</title><author>Bushuev, N. A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c459t-e28744dfcbadc7199ab95d3591d98a695000e59da8c6fbb05f9d4d6cf1ffb2793</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Analysis</topic><topic>Communications Engineering</topic><topic>Communications technology</topic><topic>Diodes</topic><topic>Electrodes</topic><topic>Electron and Ion Emission</topic><topic>Electrons</topic><topic>Emission</topic><topic>Emission analysis</topic><topic>Energy</topic><topic>Engineering</topic><topic>Microelectronics</topic><topic>Networks</topic><topic>Potential barriers</topic><topic>Studies</topic><topic>Triodes</topic><topic>Tunnels (transportation)</topic><topic>Vacuum technology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bushuev, N. A.</creatorcontrib><collection>CrossRef</collection><collection>Gale Business: Insights</collection><collection>Business Insights: Essentials</collection><collection>Gale In Context: Science</collection><collection>ProQuest Central (Corporate)</collection><collection>Electronics & Communications Abstracts</collection><collection>ABI/INFORM Collection</collection><collection>ABI/INFORM Global (PDF only)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>ABI/INFORM Global (Alumni Edition)</collection><collection>Science Database (Alumni Edition)</collection><collection>Telecommunications (Alumni Edition)</collection><collection>ProQuest Pharma Collection</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>ABI/INFORM Collection (Alumni Edition)</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Business Premium Collection</collection><collection>Technology Collection (ProQuest)</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>Business Premium Collection (Alumni)</collection><collection>ABI/INFORM Global (Corporate)</collection><collection>ProQuest Central Student</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Business Collection (Alumni Edition)</collection><collection>ProQuest Business Collection</collection><collection>ABI/INFORM Professional Advanced</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ABI/INFORM Global</collection><collection>Science Database</collection><collection>Telecommunications Database</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>ProQuest One Business</collection><collection>ProQuest One Business (Alumni)</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ABI/INFORM Collection China</collection><collection>ProQuest Central Basic</collection><jtitle>Journal of communications technology & electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bushuev, N. A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Tunnel current and I–V characteristics of vacuum extremely-high-frequency microelectronic structures</atitle><jtitle>Journal of communications technology & electronics</jtitle><stitle>J. Commun. Technol. Electron</stitle><date>2015-02-01</date><risdate>2015</risdate><volume>60</volume><issue>2</issue><spage>193</spage><epage>203</epage><pages>193-203</pages><issn>1064-2269</issn><eissn>1555-6557</eissn><abstract>Tunneling (cold emission) through potential barriers of a complex shape in vacuum microelectronic diode and triode structures, including those with several electrodes, is theoretically investigated and
I
–
V
characteristics of these structures are obtained.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1064226915020023</doi><tpages>11</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1064-2269 |
| ispartof | Journal of communications technology & electronics, 2015-02, Vol.60 (2), p.193-203 |
| issn | 1064-2269 1555-6557 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1669894381 |
| source | SpringerLink Journals - AutoHoldings |
| subjects | Analysis Communications Engineering Communications technology Diodes Electrodes Electron and Ion Emission Electrons Emission Emission analysis Energy Engineering Microelectronics Networks Potential barriers Studies Triodes Tunnels (transportation) Vacuum technology |
| title | Tunnel current and I–V characteristics of vacuum extremely-high-frequency microelectronic structures |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T04%3A44%3A17IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-gale_proqu&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Tunnel%20current%20and%20I%E2%80%93V%20characteristics%20of%20vacuum%20extremely-high-frequency%20microelectronic%20structures&rft.jtitle=Journal%20of%20communications%20technology%20&%20electronics&rft.au=Bushuev,%20N.%20A.&rft.date=2015-02-01&rft.volume=60&rft.issue=2&rft.spage=193&rft.epage=203&rft.pages=193-203&rft.issn=1064-2269&rft.eissn=1555-6557&rft_id=info:doi/10.1134/S1064226915020023&rft_dat=%3Cgale_proqu%3EA408783734%3C/gale_proqu%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1654881085&rft_id=info:pmid/&rft_galeid=A408783734&rfr_iscdi=true |