Tunnel current and I–V characteristics of vacuum extremely-high-frequency microelectronic structures

Tunnel current and I–V characteristics of vacuum extremely-high-frequency microelectronic structures

Tunneling (cold emission) through potential barriers of a complex shape in vacuum microelectronic diode and triode structures, including those with several electrodes, is theoretically investigated and I – V characteristics of these structures are obtained.

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Bibliographische Detailangaben
Veröffentlicht in:Journal of communications technology & electronics 2015-02, Vol.60 (2), p.193-203
1. Verfasser: Bushuev, N. A.
Format: Artikel
Sprache:eng
Schlagworte:
Analysis
Communications Engineering
Communications technology
Diodes
Electrodes
Electron and Ion Emission
Electrons
Emission
Emission analysis
Energy
Engineering
Microelectronics
Networks
Potential barriers
Studies
Triodes
Tunnels (transportation)
Vacuum technology
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Beschreibung
Zusammenfassung:Tunneling (cold emission) through potential barriers of a complex shape in vacuum microelectronic diode and triode structures, including those with several electrodes, is theoretically investigated and I – V characteristics of these structures are obtained.
ISSN:1064-2269
1555-6557
DOI:10.1134/S1064226915020023