Numerical investigation of nanoscale SiGe DG MOSFET performance against the interfacial defects

The SiGe‐based alloy is considered as one of the most promising materials for reliable and high performance microelectronic devices. The use of a lower band‐gap material in the channel region of the MOSFET, such as SiGe, is a potential candidate given their compatibility with the process developed for pure Si‐based devices. Moreover, the important increasing in the drain current due to the increased electrons mobility in SiGe material is expected. However, the growth of this material is not totally controlled, and the presence of defects is more than expected after a growth run of this material. Therefore, in order to obtain a global view of SiGe‐based nanoscale Double Gate (DG) MOSFET performance under critical conditions, numerical modeling of nanoscale SiGe DG MOSFET including Interfacial defect effects (SiGe/Si) is indispensable for the comprehension of the fundamentals of such device characteristics. Based on numerical investigation of a nanoscale SiGe DG MOSFET, including the defects in the interface region, in the present paper a numerical model for I‐V and small signal characteristics by including the interfacial defects, after considering the uniform function approximation for the interface defects distribution at the drain side, is developed to explain the immunity behavior of the nanoscale SiGe‐based transistor against the defect densities. In this context, DC and RF characteristics of the proposed design are analyzed by 2‐D numerical simulation and compared with conventional Si DG MOSFET characteristics. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)