Tuning conductance in C sub(60) devices: defective C sub(60) and endohedral C sub(60) complex
The transport properties and I-V characteristics of C sub(60), defective C sub(60), endohedral C sub(59) complex, and endohedral C sub(60) complex devices have been investigated. The transmission coefficients of the C sub(60) devices have been found to be largely affected by either defect or doping...
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| Veröffentlicht in: | Applied physics. A, Materials science & processing Materials science & processing, 2015-02, Vol.118 (2), p.473-477 |
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| container_title | Applied physics. A, Materials science & processing |
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| creator | Li, Guiqin |
| description | The transport properties and I-V characteristics of C sub(60), defective C sub(60), endohedral C sub(59) complex, and endohedral C sub(60) complex devices have been investigated. The transmission coefficients of the C sub(60) devices have been found to be largely affected by either defect or doping an atom in the center of the C sub(60). The conductance in C sub(60) devices can also be tuned by both defect and doping. In particular, doping an atom into the center of C sub(60) has an obvious effect on tuning conductance. C sub(60), N sub(60), and O sub(60) double the current of the C sub(60) device, while B sub(60) terminates the current at low voltage. |
| doi_str_mv | 10.1007/s00339-014-8761-0 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_1669874887</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1669874887</sourcerecordid><originalsourceid>FETCH-proquest_miscellaneous_16698748873</originalsourceid><addsrcrecordid>eNqVisFOAyEURYnRxLH1A9yxrAvsYyDAuG00fkC3pqHwqhgGxr6h8fPtwkW33s05ybmMPUh4kgB2TQBKDQKkFs4aKeCKdVKrXoBRcM06GLQVTg3mlt0RfcF5uu879r5tJZUPHmqJLcy-BOSp8A2ntl8ZeOQRTykgPZ_lgGFOJ7yIvkSOJdZPjEefL0Ko45TxZ8luDj4T3v9xwVavL9vNm5iO9bshzbsxUcCcfcHaaCeNGZzVzln1j-svUOpLMA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1669874887</pqid></control><display><type>article</type><title>Tuning conductance in C sub(60) devices: defective C sub(60) and endohedral C sub(60) complex</title><source>SpringerLink Journals</source><creator>Li, Guiqin</creator><creatorcontrib>Li, Guiqin</creatorcontrib><description>The transport properties and I-V characteristics of C sub(60), defective C sub(60), endohedral C sub(59) complex, and endohedral C sub(60) complex devices have been investigated. The transmission coefficients of the C sub(60) devices have been found to be largely affected by either defect or doping an atom in the center of the C sub(60). The conductance in C sub(60) devices can also be tuned by both defect and doping. In particular, doping an atom into the center of C sub(60) has an obvious effect on tuning conductance. C sub(60), N sub(60), and O sub(60) double the current of the C sub(60) device, while B sub(60) terminates the current at low voltage.</description><identifier>ISSN: 0947-8396</identifier><identifier>EISSN: 1432-0630</identifier><identifier>DOI: 10.1007/s00339-014-8761-0</identifier><language>eng</language><subject>Buckminsterfullerene ; Conductance ; Defects ; Devices ; Doping ; Fullerenes ; Transport properties ; Tuning</subject><ispartof>Applied physics. A, Materials science & processing, 2015-02, Vol.118 (2), p.473-477</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Li, Guiqin</creatorcontrib><title>Tuning conductance in C sub(60) devices: defective C sub(60) and endohedral C sub(60) complex</title><title>Applied physics. A, Materials science & processing</title><description>The transport properties and I-V characteristics of C sub(60), defective C sub(60), endohedral C sub(59) complex, and endohedral C sub(60) complex devices have been investigated. The transmission coefficients of the C sub(60) devices have been found to be largely affected by either defect or doping an atom in the center of the C sub(60). The conductance in C sub(60) devices can also be tuned by both defect and doping. In particular, doping an atom into the center of C sub(60) has an obvious effect on tuning conductance. C sub(60), N sub(60), and O sub(60) double the current of the C sub(60) device, while B sub(60) terminates the current at low voltage.</description><subject>Buckminsterfullerene</subject><subject>Conductance</subject><subject>Defects</subject><subject>Devices</subject><subject>Doping</subject><subject>Fullerenes</subject><subject>Transport properties</subject><subject>Tuning</subject><issn>0947-8396</issn><issn>1432-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNqVisFOAyEURYnRxLH1A9yxrAvsYyDAuG00fkC3pqHwqhgGxr6h8fPtwkW33s05ybmMPUh4kgB2TQBKDQKkFs4aKeCKdVKrXoBRcM06GLQVTg3mlt0RfcF5uu879r5tJZUPHmqJLcy-BOSp8A2ntl8ZeOQRTykgPZ_lgGFOJ7yIvkSOJdZPjEefL0Ko45TxZ8luDj4T3v9xwVavL9vNm5iO9bshzbsxUcCcfcHaaCeNGZzVzln1j-svUOpLMA</recordid><startdate>20150201</startdate><enddate>20150201</enddate><creator>Li, Guiqin</creator><scope>7TB</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>FR3</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20150201</creationdate><title>Tuning conductance in C sub(60) devices: defective C sub(60) and endohedral C sub(60) complex</title><author>Li, Guiqin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_16698748873</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Buckminsterfullerene</topic><topic>Conductance</topic><topic>Defects</topic><topic>Devices</topic><topic>Doping</topic><topic>Fullerenes</topic><topic>Transport properties</topic><topic>Tuning</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, Guiqin</creatorcontrib><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics. A, Materials science & processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Li, Guiqin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Tuning conductance in C sub(60) devices: defective C sub(60) and endohedral C sub(60) complex</atitle><jtitle>Applied physics. A, Materials science & processing</jtitle><date>2015-02-01</date><risdate>2015</risdate><volume>118</volume><issue>2</issue><spage>473</spage><epage>477</epage><pages>473-477</pages><issn>0947-8396</issn><eissn>1432-0630</eissn><abstract>The transport properties and I-V characteristics of C sub(60), defective C sub(60), endohedral C sub(59) complex, and endohedral C sub(60) complex devices have been investigated. The transmission coefficients of the C sub(60) devices have been found to be largely affected by either defect or doping an atom in the center of the C sub(60). The conductance in C sub(60) devices can also be tuned by both defect and doping. In particular, doping an atom into the center of C sub(60) has an obvious effect on tuning conductance. C sub(60), N sub(60), and O sub(60) double the current of the C sub(60) device, while B sub(60) terminates the current at low voltage.</abstract><doi>10.1007/s00339-014-8761-0</doi></addata></record> |
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| issn | 0947-8396 1432-0630 |
| language | eng |
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| source | SpringerLink Journals |
| subjects | Buckminsterfullerene Conductance Defects Devices Doping Fullerenes Transport properties Tuning |
| title | Tuning conductance in C sub(60) devices: defective C sub(60) and endohedral C sub(60) complex |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-15T03%3A23%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Tuning%20conductance%20in%20C%20sub(60)%20devices:%20defective%20C%20sub(60)%20and%20endohedral%20C%20sub(60)%20complex&rft.jtitle=Applied%20physics.%20A,%20Materials%20science%20&%20processing&rft.au=Li,%20Guiqin&rft.date=2015-02-01&rft.volume=118&rft.issue=2&rft.spage=473&rft.epage=477&rft.pages=473-477&rft.issn=0947-8396&rft.eissn=1432-0630&rft_id=info:doi/10.1007/s00339-014-8761-0&rft_dat=%3Cproquest%3E1669874887%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1669874887&rft_id=info:pmid/&rfr_iscdi=true |