Tuning conductance in C sub(60) devices: defective C sub(60) and endohedral C sub(60) complex

The transport properties and I-V characteristics of C sub(60), defective C sub(60), endohedral C sub(59) complex, and endohedral C sub(60) complex devices have been investigated. The transmission coefficients of the C sub(60) devices have been found to be largely affected by either defect or doping...

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Veröffentlicht in:Applied physics. A, Materials science & processing Materials science & processing, 2015-02, Vol.118 (2), p.473-477
1. Verfasser: Li, Guiqin
Format: Artikel
Sprache:eng
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Zusammenfassung:The transport properties and I-V characteristics of C sub(60), defective C sub(60), endohedral C sub(59) complex, and endohedral C sub(60) complex devices have been investigated. The transmission coefficients of the C sub(60) devices have been found to be largely affected by either defect or doping an atom in the center of the C sub(60). The conductance in C sub(60) devices can also be tuned by both defect and doping. In particular, doping an atom into the center of C sub(60) has an obvious effect on tuning conductance. C sub(60), N sub(60), and O sub(60) double the current of the C sub(60) device, while B sub(60) terminates the current at low voltage.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-014-8761-0