Precise control of chemical vapor deposition graphene layer thickness using Ni sub(x)Cu sub(1-x) alloys

We investigated a simple but effective method to precisely control the desired number of graphene layers on the Ni sub(x)Cu sub(1-x) alloy substrates by thermal chemical vapor deposition. Our method could be utilized to precisely control the number of graphene layers without altering growth conditio...

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Veröffentlicht in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2015-02, Vol.3 (7), p.1463-1467
Hauptverfasser: Choi, Hyonkwang, Lim, Yeongjin, Park, Minjeong, Lee, Sehui, Kang, Younsik, Kim, Min Su, Kim, Jeongyong, Jeon, Minhyon
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container_end_page 1467
container_issue 7
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container_title Journal of materials chemistry. C, Materials for optical and electronic devices
container_volume 3
creator Choi, Hyonkwang
Lim, Yeongjin
Park, Minjeong
Lee, Sehui
Kang, Younsik
Kim, Min Su
Kim, Jeongyong
Jeon, Minhyon
description We investigated a simple but effective method to precisely control the desired number of graphene layers on the Ni sub(x)Cu sub(1-x) alloy substrates by thermal chemical vapor deposition. Our method could be utilized to precisely control the number of graphene layers without altering growth conditions such as growth temperature and the cooling rate.
doi_str_mv 10.1039/c4tc01979b
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source Royal Society Of Chemistry Journals 2008-; Alma/SFX Local Collection
subjects Alloys
CHEMICAL VAPOR DEPOSITION
Cooling rate
DEPOSITION
Electronic devices
ELECTRONIC PRODUCTS
Graphene
MICA
VAPOR DEPOSITION
title Precise control of chemical vapor deposition graphene layer thickness using Ni sub(x)Cu sub(1-x) alloys
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