Precise control of chemical vapor deposition graphene layer thickness using Ni sub(x)Cu sub(1-x) alloys

Precise control of chemical vapor deposition graphene layer thickness using Ni sub(x)Cu sub(1-x) alloys

We investigated a simple but effective method to precisely control the desired number of graphene layers on the Ni sub(x)Cu sub(1-x) alloy substrates by thermal chemical vapor deposition. Our method could be utilized to precisely control the number of graphene layers without altering growth conditio...

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Veröffentlicht in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2015-02, Vol.3 (7), p.1463-1467
Hauptverfasser: Choi, Hyonkwang, Lim, Yeongjin, Park, Minjeong, Lee, Sehui, Kang, Younsik, Kim, Min Su, Kim, Jeongyong, Jeon, Minhyon
Format: Artikel
Sprache:eng
Schlagworte:
Alloys
CHEMICAL VAPOR DEPOSITION
Cooling rate
DEPOSITION
Electronic devices
ELECTRONIC PRODUCTS
Graphene
MICA
VAPOR DEPOSITION
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Beschreibung
Zusammenfassung:We investigated a simple but effective method to precisely control the desired number of graphene layers on the Ni sub(x)Cu sub(1-x) alloy substrates by thermal chemical vapor deposition. Our method could be utilized to precisely control the number of graphene layers without altering growth conditions such as growth temperature and the cooling rate.
ISSN:2050-7526
2050-7534
DOI:10.1039/c4tc01979b