Controllable n-Type Doping on CVD-Grown Single- and Double-Layer Graphene Mixture

Controllable n-Type Doping on CVD-Grown Single- and Double-Layer Graphene Mixture

n‐Type doping of mixed single‐ and double‐layer graphene grown by chemical vapor deposition (CVD) using decamethyl­cobaltocene reveals a local‐quasilinear relationship between the work function and the logarithm of the dopant solution concentration. The relationship that arises from bandgap opening...

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Veröffentlicht in:Advanced materials (Weinheim) 2015-03, Vol.27 (9), p.1619-1623
Hauptverfasser: Xu, Wentao, Wang, Lihua, Liu, Yiwen, Thomas, Simil, Seo, Hong-Kyu, Kim, Kwang-Ik, Kim, Kwang S., Lee, Tae-Woo
Format: Artikel
Sprache:eng
Schlagworte:
band gap opening
Chemical vapor deposition
decamethylcobaltocene
Dopants
Doping
electrohydrodynamic nanowire lithography
Graphene
Logarithms
Stability
work function tuning
Work functions
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Zusammenfassung:n‐Type doping of mixed single‐ and double‐layer graphene grown by chemical vapor deposition (CVD) using decamethyl­cobaltocene reveals a local‐quasilinear relationship between the work function and the logarithm of the dopant solution concentration. The relationship that arises from bandgap opening is deduced by comparing the relationship between the two factors for single‐ or double‐layer graphene. This work has extensive applicability and practical significance in doping CVD‐grown graphene.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201405353