Hydrogen sensing performance of a nickel oxide (NiO) thin film-based device

An interesting nickel oxide (NiO) thin film-based hydrogen sensor device, prepared by a low-powered (50 W) radio-frequency (RF) sputtering process, is studied and demonstrated. The studied device shows improved performance including a very high hydrogen sensing response ratio (416 (ΔR/R)), an extrem...

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Veröffentlicht in:	International journal of hydrogen energy 2015-01, Vol.40 (1), p.729-734
Hauptverfasser:	Chou, Po-Cheng, Chen, Huey-Ing, Liu, I-Ping, Chen, Chun-Chia, Liou, Jian-Kai, Hsu, Kai-Siang, Liu, Wen-Chau
Format:	Artikel
Sprache:	eng
Schlagworte:	Detection Devices H2 sensor Hydrogen-based energy Low cost Nickel oxides NiO thin film Operating temperature Resistance Response (recovery) time constant RF sputtering Sensing response ratio Sensors Sputtering Thin films
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Beschreibung
Zusammenfassung:	An interesting nickel oxide (NiO) thin film-based hydrogen sensor device, prepared by a low-powered (50 W) radio-frequency (RF) sputtering process, is studied and demonstrated. The studied device shows improved performance including a very high hydrogen sensing response ratio (416 (ΔR/R)), an extremely low detecting limit (
ISSN:	0360-3199 1879-3487
DOI:	10.1016/j.ijhydene.2014.10.142