Mode-locked Tm,Ho:KLu(WO(4))(2) laser at 2060 nm using InGaSb-based SESAMs

Passive mode-locking of a Tm,Ho:KLu(WO(4))(2) laser operating at 2060 nm using different designs of InGaAsSb quantum-well based semiconductor saturable absorber mirrors (SESAMs) is demonstrated. The self-starting mode-locked laser delivers pulse durations between 4 and 8 ps at a repetition rate of 9...

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Veröffentlicht in:	Optics express 2015-02, Vol.23 (4), p.4614-4619
Hauptverfasser:	Aleksandrov, Veselin, Gluth, Alexander, Petrov, Valentin, Buchvarov, Ivan, Steinmeyer, Günter, Paajaste, Jonna, Suomalainen, Soile, Härkönen, Antti, Guina, Mircea, Mateos, Xavier, Díaz, Francesc, Griebner, Uwe
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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Zusammenfassung:	Passive mode-locking of a Tm,Ho:KLu(WO(4))(2) laser operating at 2060 nm using different designs of InGaAsSb quantum-well based semiconductor saturable absorber mirrors (SESAMs) is demonstrated. The self-starting mode-locked laser delivers pulse durations between 4 and 8 ps at a repetition rate of 93 MHz with maximum average output power of 155 mW. Mode-locking performance of a Tm,Ho:KLu(WO(4))(2) laser is compared for usage of a SESAM to a single-walled carbon nanotube saturable absorber.
ISSN:	1094-4087
DOI:	10.1364/OE.23.004614