Design of an Efficient Charge-Trapping Layer with a Built-In Tunnel Barrier for Reliable Organic-Transistor Memory

Design of an Efficient Charge-Trapping Layer with a Built-In Tunnel Barrier for Reliable Organic-Transistor Memory

A fully feasible and versatile way to fabricate highly reliable organic‐transistor memory devices is made possible by a novel design of the charge‐trappling layer. Gold@silica (core–shell)‐structured nanoparticles are synthesized and used as the charge‐trapping layer. Superior electrical reliability...

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Veröffentlicht in:Advanced materials (Weinheim) 2015-01, Vol.27 (4), p.706-711
Hauptverfasser: Park, Young-Su, Lee, Jang-Sik
Format: Artikel
Sprache:eng
Schlagworte:
Barriers
core-shell nanoparticles
Data storage
Memory devices
Nanoparticles
organic electronics
organic-transistor memory
Potential barriers
Shells
Silicon dioxide
Tunnels (transportation)
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Beschreibung
Zusammenfassung:A fully feasible and versatile way to fabricate highly reliable organic‐transistor memory devices is made possible by a novel design of the charge‐trappling layer. Gold@silica (core–shell)‐structured nanoparticles are synthesized and used as the charge‐trapping layer. Superior electrical reliability is obtained because the silica shell acts as a built‐in tunnel potential barrier.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201404625